IRF630 datasheet(4/14 Pages) STMICROELECTRONICS

номер детали	IRF630

подробное описание детали	N-channel 200V - 0.35廓 - 9A TO-220/TO-220FP Mesh overlay??II Power MOSFET

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Electrical characteristics

IRF630 - IRF630FP

4/14

2

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

200

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125°C

1

50

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20V

±

100

nA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250µA

23

4

V

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 4.5A

0.35

0.40

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS > ID(on) x RDS(on)max,

ID = 4.5A

34

S

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz, VGS=0

540

90

35

700

120

50

pF

td(on)

tr

Turn-on Delay Time

Rise Time

VDD = 100V, ID = 4.5A,

RG = 4.7Ω, VGS = 10V

(see Figure 14)

10

15

14

20

ns

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=160V, ID = 9A

VGS =10V

31

7.5

9

45

nC

Аналогичный номер детали - IRF630

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	IRF630	97Kb / 9P	N-channel TrenchMOS transistor August 1999 Rev 1.100
Inchange Semiconductor ...	IRF630	128Kb / 1P	N-channel mosfet transistor
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STMicroelectronics	IRF630	104Kb / 9P	N - CHANNEL 200V - 0.35ihm - 9A - TO-220/FP MESH OVERLAY] MOSFET
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Аналогичное описание - IRF630

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STMicroelectronics	IRF630M	326Kb / 14P	N-channel 200V - 0.35廓 - 9A - TO-220 /TO-220FP Mesh Overlay??Power MOSFET
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	IRF634	333Kb / 9P	N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET
	STP16NS25	330Kb / 9P	N-CHANNEL 250V - 0.23ohm - 16A TO-220 / TO-220FP MESH OVERLAY??MOSFET
	STP8NS25	329Kb / 9P	N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY??MOSFET

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IRF630 датащи(PDF) 4 Page - STMicroelectronics

IRF630 датащи(HTML) 4 Page - STMicroelectronics

Аналогичный номер детали - IRF630

Аналогичное описание - IRF630

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