2SK1336 datasheet(4/7 Pages) RENESAS

номер детали	2SK1336

подробное описание детали	Silicon N Channel MOS FET

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2SK1336

Rev.2.00 Sep 07, 2005 page 4 of 6

5

40

160

Case Temperature TC (°C)

4

1

0

80

120

0

2

3

Static Drain to Source on State

Resistance vs. Temperature

–40

Pulse Test

VGS = 4 V

ID = 0.5 A

0.2 A

0.1 A

0.5 A

0.2 A

0.1 A

10 V

5

2

Drain Current ID (A)

Forward Transfer Admittance

vs. Drain Current

0.02

2

1

0.5

0.2

0.1

0.05

0.1

1

0.5

0.2

VDS = 10 V

Pulse Test

TC = 75°C

–25

°C

25

°C

1,000

5

Reverse Drain Current IDR (A)

Body to Drain Diode Reverse

Recovery Time

0.05

500

200

100

20

50

10

0.1

0.2

0.5

1

2

di/dt = 50 A/

µs

VGS = 0, Ta = 25°C

Pulse Test

100

20

50

Drain to Source Voltage VDS (V)

10

30

40

Typical Capacitance vs.

Drain to Source Voltage

0

10

1

0.1

VGS = 0

f = 1 MHz

Crss

Coss

Ciss

100

1.6

4.0

Gate Charge Qg (nc)

Dynamic Input Characteristics

80

20

0.8

2.4

3.2

0

40

60

20

16

4

0

8

12

0

VDD = 10 V

25 V

50 V

VDD = 50 V

25 V

10 V

ID = 0.3 A

VDS

VGS

100

5

Drain Current ID (A)

0.05

Switching Characteristics

VGS = 10 V, PW = 2 µs

duty < 1%, VDD

30 V

td (off)

tf

tr

td (on)

0.1

0.2

0.5

1

2

50

20

10

5

2

1

=

.

Аналогичный номер детали - 2SK1336

производитель	номер детали	датащи	подробное описание детали
Hitachi Semiconductor	2SK1336	41Kb / 8P	Silicon N-Channel MOS FET

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Аналогичное описание - 2SK1336

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Renesas Technology Corp	HAT2088R	110Kb / 9P	Silicon N Channel MOS FET Silicon N Channel MOS FET
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	2SK1526	50Kb / 9P	Silicon N-Channel MOS FET
	2SK619	35Kb / 1P	SILICON N-CHANNEL MOS FET
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Panasonic Semiconductor	2SK1228	35Kb / 2P	Silicon N-Channel MOS FET
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Аналогичный номер детали - 2SK1336

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