2SK2212-E datasheet(4/7 Pages) RENESAS

номер детали	2SK2212-E

подробное описание детали	Silicon N Channel MOS FET

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2SK2212

Rev.2.00 Sep 07, 2005 page 4 of 6

Case Temperature TC (°C)

Static Drain to Source on State

Resistance vs. Temperature

Drain Current ID (A)

Forward Transfer Admittance

vs. Drain Current

Reverse Drain Current IDR (A)

Body to Drain Diode Reverse

Recovery Time

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

Gate Charge Qg (nc)

Dynamic Input Characteristics

Drain Current ID (A)

Switching Characteristics

1.0

0.8

0.6

0.4

0.2

–40

0

40

80

120

160

0

ID = 10 A

VGS = 10 V

Pulse Test

2 A

5 A

0.1

0.3

1

3

10

30

100

10

2

5

1

0.1

0.2

0.5

25

°C

Tc = –25

°C

75

°C

VDS = 10 V

Pulse Test

500

200

100

20

50

10

5

di / dt = 100 A /

µs

VGS = 0, Ta = 25°C

0.2

0.5

1

2

5

10

20

0

10

20

30

40

50

5000

1000

100

10

5

Ciss

Coss

Crss

VGS = 0

f = 1 MHz

500

400

300

200

100

0

20

16

12

8

4

0

VDD = 50 V

100 V

150 V

VGS

VDS

ID = 15 A

VDD = 150 V

100 V

50 V

8

16

24

32

40

5

500

200

100

20

50

10

VGS = 10 V, VDD = 30 V

PW = 5

µs, duty < 1 %

tf

tr

td(on)

td(off)

0.2

0.5

1

2

5

10

20

Аналогичный номер детали - 2SK2212-E

производитель	номер детали	датащи	подробное описание детали
Hitachi Semiconductor	2SK2212	48Kb / 10P	Silicon N-Channel MOS FET
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Аналогичное описание - 2SK2212-E

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Renesas Technology Corp	HAT2088R	110Kb / 9P	Silicon N Channel MOS FET Silicon N Channel MOS FET
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Panasonic Semiconductor	2SK1228	35Kb / 2P	Silicon N-Channel MOS FET
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2SK2212-E датащи(PDF) 4 Page - Renesas Technology Corp

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Аналогичный номер детали - 2SK2212-E

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