2SK2980 datasheet(4/7 Pages) RENESAS

номер детали	2SK2980

подробное описание детали	Silicon N Channel MOS FET High Speed Power Switching

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2SK2980

Rev.4.00 Sep 07, 2005 page 4 of 6

0.5

0.4

0.3

0.2

0.1

–40

0

40

80

120

160

0

5

2

1

0.2

0.5

0.1

0.05

0.01 0.02

0.05 0.1

0.2

0.5

ID = 0.1 A, 0.2 A, 0.5 A

VGS = 2.5 V

4 V

0.1 A, 0.2 A, 0.5 A

1

25

°C

Tc = –25

°C

75

°C

Case Temperature

Tc

(

°C)

Static Drain to Source on State Resistance

vs. Temperature

Drain Current ID (A)

Forward Transfer Admittance vs.

Drain Current

Pulse Test

VDS = 10 V

Pulse Test

010

20

30

40

50

200

500

100

10

20

50

200

100

20

50

2

5

1

1.0

0.8

0.6

0.4

0.2

0

0.4

0.8

1.2

1.6

2.0

5

1000

Ciss

Coss

Crss

VGS = 0

f = 1 MHz

50

40

30

20

10

0

20

16

12

8

4

246

8

10

0

VDD = 20 V

10 V

5 V

ID = 1 A

VGS

VDS

V

= 5 V

10 V

20 V

DD

0.1

0.2

0.5

1

2

5

10

tf

tr

td(on)

td(off)

VGS = 4 V, VDD = 10 V

PW = 2

µs, duty < 1 %

VGS = 0

5 V

Drain to Source Voltage VDS

(V)

Typical Capacitance vs.

Drain to Source Voltage

Drain Current

ID (A)

Switching Characteristics

Source to Drain Voltage

VSD (V)

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Test

Gate Charge

Qg (nc)

Dynamic Input Characteristics

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Аналогичный номер детали - 2SK2980

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