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STP180N55F3 датащи(PDF) 1 Page - STMicroelectronics |
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STP180N55F3 датащи(HTML) 1 Page - STMicroelectronics |
1 / 14 page June 2007 Rev 2 1/14 14 STB180N55F3 STP180N55F3 N-channel 55V - 3.2m Ω - 120A - D2PAK/TO-220 STripFET™ Power MOSFET Features ■ Ultra low on-resistance ■ 100% avalanche tested Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size™” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. Application ■ Switching applications Internal schematic diagram Type VDSS RDS(on) ID Pw STB180N55F3 55V 3.5m Ω 120A(1) 1. Value limited by wire bonding 330W STP180N55F3 55V 3.8m Ω 120A(1) 330W D2PAK 1 3 TO-220 1 2 3 www.st.com Order codes Part number Marking Package Packaging STB180N55F3 180N55F3 D2PAK Tape & reel STP180N55F3 180N55F3 TO-220 Tube |
Аналогичный номер детали - STP180N55F3 |
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Аналогичное описание - STP180N55F3 |
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