поискавой системы для электроныых деталей |
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2SJ217-E датащи(PDF) 3 Page - Renesas Technology Corp |
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2SJ217-E датащи(HTML) 3 Page - Renesas Technology Corp |
3 / 7 page 2SJ217 Rev.2.00 Sep 07, 2005 page 3 of 6 Main Characteristics Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Typical Foward Transfer Characteristics –100 0 –20 –40 –60 –80 0 –4 –8 –12 –16 –20 –50 0 –10 –20 –30 –40 0 –1–2–3–4–5 Tc = –25°C 25°C 75°C 200 0 100 50 150 0 50 100 200 150 VDS = –10 V Pulse Test –10 V –6 V –5 V –4 V –3 V VGS = –2 V Pulse Test Drain to Source Voltage VDS (V) Maximum Safe Operation Area –100 –50 –20 –10 –5 –2 –1 –2 –5 –10 –20 –50 –100 –200 Ta = 25°C PW = 10 ms (1 shot) Operation in this area is limited by RDS (on) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage –2.5 0 –0.5 –1.0 –1.5 –2.0 0–2 –4 –6 –8 –10 Pulse Test ID = –10 A –20 A –50 A Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current 0.1 0.05 0.01 0.02 0.005 –10 –50 –100 –2 –20 –200 –5 0.5 0.2 VGS = –4 V –10 V Pulse Test |
Аналогичный номер детали - 2SJ217-E |
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Аналогичное описание - 2SJ217-E |
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