поискавой системы для электроныых деталей |
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2SK3159-E датащи(PDF) 4 Page - Renesas Technology Corp |
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2SK3159-E датащи(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SK3159 Rev.4.00 May 15, 2006 page 4 of 7 Case Temperature Tc ( °C) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Reverse Drain Current IDR (A) Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Dynamic Input Characteristics Gate Charge Qg (nc) Switching Characteristics Drain Current ID (A) 100 –50 0 50 100 150 200 0 20 40 60 80 0.1 0.3 1 30 100 200 2 5 10 20 1 0.5 Pulse Test 10 50 ID = 50 A VGS = 4 V 10 V 10, 20 A 10, 20 A 50 A 500 3 100 0.1 1 3 10 30 0.3 010 20 30 40 50 30000 3000 10000 1000 100 300 200 0 0 40 80 120 160 20 80 160 240 320 400 0 4 8 12 16 5000 1000 500 200 50 100 0.1 0.2 1 5 10 1000 500 200 50 100 20 10 ID = 50 A VGS VDS 20 10 0.5 250 20 100 VDD = 100 V 50 V 25 V VDD = 100 V 50 V 25 V VGS = 0 f = 1 MHz Ciss Coss Crss 2000 VDS = 10 V Pulse Test di / dt = 50 A / µs VGS = 0, Ta = 25°C tf tr td(off) td(on) VGS = 10 V, VDD = 30 V PW = 5 µs, duty ≤ 1 % Tc = –25°C 25°C 75°C |
Аналогичный номер детали - 2SK3159-E |
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Аналогичное описание - 2SK3159-E |
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