2SK3159-E datasheet(4/8 Pages) RENESAS

номер детали	2SK3159-E

подробное описание детали	Silicon N Channel MOS FET High Speed Power Switching

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производитель	RENESAS [Renesas Technology Corp]

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2SK3159

Rev.4.00 May 15, 2006 page 4 of 7

Case Temperature Tc (

°C)

Static Drain to Source on State Resistance

vs. Temperature

Forward Transfer Admittance vs.

Drain Current

Drain Current ID (A)

Body to Drain Diode Reverse

Recovery Time

Reverse Drain Current IDR (A)

Typical Capacitance vs.

Drain to Source Voltage

Drain to Source Voltage VDS (V)

Dynamic Input Characteristics

Gate Charge Qg (nc)

Switching Characteristics

Drain Current ID (A)

100

–50

0

50

100

150

200

0

20

40

60

80

0.1

0.3

1

30

100

200

2

5

10

20

1

0.5

Pulse Test

10

50

ID = 50 A

VGS = 4 V

10 V

10, 20 A

50 A

500

3

100

0.1

1

3

10

30

0.3

010

20

30

40

50

30000

3000

10000

1000

100

300

200

0

40

80

120

160

20

80

160

240

320

400

0

4

8

12

16

5000

1000

500

200

50

100

0.1 0.2

1

5

10

1000

500

200

50

100

20

10

ID = 50 A

VGS

VDS

20

10

0.5

250

20

100

VDD = 100 V

50 V

25 V

VDD = 100 V

50 V

25 V

VGS = 0

f = 1 MHz

Ciss

Coss

Crss

2000

VDS = 10 V

Pulse Test

di / dt = 50 A /

µs

VGS = 0, Ta = 25°C

tf

tr

td(off)

td(on)

VGS = 10 V, VDD = 30 V

PW = 5

µs, duty ≤ 1 %

Tc = –25°C

25°C

75°C

Аналогичный номер детали - 2SK3159-E

производитель	номер детали	датащи	подробное описание детали
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2SK3159-E датащи(PDF) 4 Page - Renesas Technology Corp

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