2SC1345 datasheet(4/11 Pages) RENESAS

номер детали	2SC1345

подробное описание детали	Silicon NPN Epitaxial

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2SC1345 (K)

2

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

V

CBO

55

V

Collector to emitter voltage

V

CEO

50

V

Emitter to base voltage

V

EBO

5V

Collector current

I

C

100

mA

Collector power dissipation

P

C

200

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

V

(BR)CBO

55

—

V

I

C = 10 µA, IE = 0

Collector to emitter breakdown

voltage

V

(BR)CEO

50

—

V

I

C = 1 mA, RBE =

Emitter to base breakdown

voltage

V

(BR)EBO

5—

—

VI

E = 10 µA, IC = 0

Collector cutoff current

I

CBO

—

0.5

µA

V

CB = 18 V, IE = 0

Emitter cutoff current

I

EBO

—

0.5

µA

V

EB = 2 V, IC = 0

DC current transfer ratio

h

FE*

1

250

—

1200

V

CE = 12 V, IC = 2 mA

Base to emitter voltage

V

BE

—

0.75

V

CE = 12 V, IC = 2 mA

Collector to emitter saturation

voltage

V

CE(sat)

—

0.5

V

I

C = 10 mA, IB = 1 mA

Collector output capacitance

Cob

—

2.3

3.5

pF

V

CB = 10 V, IE = 0, f = 1 MHz

Gain bandwidth product

f

T

—

230

—

MHz

V

CE = 12 V, IC = 2 mA

Noise figure

NF

—

8

dB

V

CE = 6 V, IC = 0.1 mA,

f = 10 Hz, R

g = 10 kΩ

——

1

dB

V

CE = 6 V, IC = 0.1 mA,

f = 1 kHz, R

g = 10 kΩ

Note:

1. The 2SC1345(K) is grouped by h

FE as follows.

DE

F

250 to 500

400 to 800

600 to 1200

Аналогичный номер детали - 2SC1345

производитель	номер детали	датащи	подробное описание детали
Hitachi Semiconductor	2SC1345	40Kb / 8P	Silicon NPN Epitaxial
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