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STY25NA60 датащи(PDF) 2 Page - STMicroelectronics

номер детали STY25NA60
подробное описание детали  N - CHANNEL 600V - 0.225ohm - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STY25NA60 датащи(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-Heatsink
Typ
with Conduct ive Grease
0.42
40
0.05
oC/W
oC/W
oC/W
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Valu e
Unit
IAR
Avalanche Current , Repet itive or Not-Repet itive
(pulse width limited by Tj max)
25
A
EAS
Single Pulse Avalanche Energy
(starting Tj =25
oC, I
D =IAR,VDD =50 V )
3000
mJ
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =250
µAVGS =0
600
V
IDSS
Zero G ate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS = Max Rating
Tc =125
oC
50
500
µA
µA
IGSS
Gat e-body Leakage
Current (VDS =0)
VGS =
± 30 V
± 100
nA
ON (
∗)
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
VGS(th)
Gat e Threshold
Voltage
VDS =VGS
ID = 250
µA
345
V
RDS(on)
Static Drain-source O n
Resist ance
VGS =10 V
ID = 12.5 A
0. 225
0.24
ID(o n)
On Stat e Drain Current
VDS >ID(o n) xRDS(on )max
VGS =10 V
25
A
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
gfs (
∗)Forward
Transconduct ance
VDS >ID(o n) xRDS(on )max
ID = 12.5 A
20
S
Ciss
Coss
Crss
Input Capacitance
Out put Capacitance
Reverse T ransfer
Capacitance
VDS =25 V
f = 1 MHz
VGS = 0
6200
690
195
pF
pF
pF
STY25NA60
2/8


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