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STU60N3LH5 датащи(PDF) 4 Page - STMicroelectronics

номер детали STU60N3LH5
подробное описание детали  N-channel 30 V, 0.0072 廓, 48 A - DPAK - IPAK STripFET??V Power MOSFET
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Electrical characteristics
STD60N3LH5 - STU60N3LH5
4/15
2
Electrical characteristics
(TCASE = 25°C unless otherwise specified)
Table 4.
Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
Voltage
ID = 250µA, VGS= 0
30
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 30V
VDS = 30V,Tc = 125°C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ± 22V
±
100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
1V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 24A
SMD version
0.0072
0.008
VGS= 10V, ID= 24A
0.0076 0.0084
VGS= 5V, ID= 24A
SMD version
0.0088
0.011
VGS= 5V, ID= 24A
0.0092 0.0114
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1MHz,
VGS=0
1350
265
32
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=15V, ID = 48A
VGS =5V
(Figure 14)
8.8
4.7
2.2
nC
nC
nC
Qgs1
Qgs2
Pre Vth gate-to-source
charge
Post Vth gate-to-source
charge
VDD=15V, ID = 48A
VGS =5V
(Figure 19)
2.2
2.5
nC
nC
RG
Gate input resistance
f=1MHz gate bias
Bias= 0 test signal
level=20mV
open drain
1.1


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