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IRF740AL датащи(PDF) 1 Page - Vishay Siliconix |
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IRF740AL датащи(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91052 www.vishay.com S-Pending-Rev. A, 19-Jun-08 WORK-IN-PROGRESS 1 Power MOSFET IRF740AS, IRF740AL, SiHF740AS, SiHF740AL Vishay Siliconix FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High speed Power Switching TYPICAL SMPS TOPOLOGIES • Single Transistor Flyback Xfmr. Reset • Single Transistor Forward Xfmr. Reset (Both for US Line Input Only) Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 12.6 mH, RG = 25 Ω, IAS = 10 A (see fig. 12). c. ISD ≤ 10 A, dI/dt ≤ 330 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. Uses IRF740A/SiHF740A data and test conditions. PRODUCT SUMMARY VDS (V) 400 RDS(on) (Ω)VGS = 10 V 0.55 Qg (Max.) (nC) 36 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single N-Channel MOSFET G D S D2PAK (TO-263) G D S I2PAK (TO-262) Available RoHS* COMPLIANT ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) Lead (Pb)-free IRF740ASPbF IRF740ASTRLPbFa IRF740ASTRRPbFa IRF740ALPbF SiHF740AS-E3 SiHF740ASTL-E3a SiHF740ASTR-E3a SiHF740AL-E3 SnPb IRF740AS IRF740ASTRLa IRF740ASTRRa IRF740AL SiHF740AS SiHF740ASTLa SiHF740ASTRa SiHF740AL ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 400 V Gate-Source Voltage VGS ± 30 Continuous Drain Currente VGS at 10 V TC = 25 °C ID 10 A TC = 100 °C 6.3 Pulsed Drain Currenta, e IDM 40 Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energyb, e EAS 630 mJ Avalanche Currenta IAR 10 A Repetiitive Avalanche Energya EAR 12.5 mJ Maximum Power Dissipation TA = 25 °C PD 3.1 W TC = 25 °C 125 Peak Diode Recovery dV/dtc, e dV/dt 5.9 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d * Pb containing terminations are not RoHS compliant, exemptions may apply |
Аналогичный номер детали - IRF740AL |
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Аналогичное описание - IRF740AL |
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