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IRFB11N50APBF датащи(PDF) 2 Page - Vishay Siliconix |
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IRFB11N50APBF датащи(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com Document Number: 91094 2 S-81243-Rev. B, 21-Jul-08 IRFB11N50A, SiHFB11N50A Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Coss effective is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS. THERMAL RESISTANCE PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -62 °C/W Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC -0.75 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 500 - - V Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 25 µA VDS = 400 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 6.6 Ab - - 0.52 Ω Forward Transconductance gfs VDS = 50 V, ID = 6.6 A 6.1 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1423 - pF Output Capacitance Coss - 208 - Reverse Transfer Capacitance Crss -8.1 - Output Capacitance Coss VGS = 0 V VDS = 1.0 V, f = 1.0 MHz - 2000 - VDS = 400 V, f = 1.0 MHz - 55 - Effective Output Capacitance Coss eff. VDS = 0 V to 400 V - 97 - Total Gate Charge Qg VGS = 10 V ID = 11 A, VDS = 400 V see fig. 6 and 13b -- 52 nC Gate-Source Charge Qgs -- 13 Gate-Drain Charge Qgd -- 18 Turn-On Delay Time td(on) VDD = 250 V, ID = 11 A RG = 9.1 Ω, RD = 22 Ω, see fig. 10b -14 - ns Rise Time tr -35 - Turn-Off Delay Time td(off) -32 - Fall Time tf -28 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 11 A Pulsed Diode Forward Currenta ISM -- 44 Body Diode Voltage VSD TJ = 25 °C, IS = 11 A, VGS = 0 Vb -- 1.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 11 A, dI/dt = 100 A/µsb - 510 770 ns Body Diode Reverse Recovery Charge Qrr -3.4 5.1 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) S D G |
Аналогичный номер детали - IRFB11N50APBF |
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Аналогичное описание - IRFB11N50APBF |
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