Document Number: 91116

www.vishay.com

S-Pending-Rev. A, 23-Jun-08

WORK-IN-PROGRESS

1

Power MOSFET

IRFBC40S, IRFBC40L, SiHFBC40S, SiHFBC40L

Vishay Siliconix

FEATURES

• Surface Mount (IRFBC40S/SiHFBC40S)

• Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)

• Available

in

Tape

and

Reel

(IRFBC20S,

SiHFBC20S)

• Dynamic dV/dt Rating

• 150 °C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

the accommodating die sizes up to HEX-4. It provides the

highest

power

capability

and

the

lowest

possible

on-resistance in any existing surface mount package. The

low internal connection resistance and can dissipate up to

2.0 W in a typical surface mount application. The

through-hole version (IRFBC40L/SiHFBC40L) is available

for low-profile applications.

Note

a. See device orientation.

PRODUCT SUMMARY

600

1.2

60

8.3

30

Configuration

Single

N-Channel MOSFET

G

D

S

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

Lead (Pb)-free

IRFBC40SPbF

IRFBC40LPbF

SiHFBC40S-E3

SiHFBC40L-E3

SnPb

IRFBC40S

IRFBC40L

SiHFBC40S

SiHFBC40L

PARAMETER

SYMBOL

LIMIT

UNIT

600

V

± 20

Continuous Drain Current

6.2

A

3.9

25

Linear Derating Factor

1.0

W/°C

570

mJ

6.2

A

13

mJ

Maximum Power Dissipation

130

W

3.1

dV/dt

3.0

V/ns

* Pb containing terminations are not RoHS compliant, exemptions may apply