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ILCT6 датащи(PDF) 2 Page - Vishay Siliconix |
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ILCT6 датащи(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83645 2 Rev. 1.5, 20-Dec-07 ILCT6/MCT6 Vishay Semiconductors Optocoupler, Phototransistor Output, Dual Channel Note Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Rated forward current, DC 60 mA Peak forward current, DC 1.0 µs pulse, 300 pps IFM 3.0 A Power dissipation Pdiss 100 mW Derate linearly from 25 °C 1.3 mW/°C OUTPUT Collector current IC 30 mA Collector emitter breakdown voltage BVCEO 30 V Power dissipation Pdiss 150 mW Derate linearly from 25 °C 2.0 mW/°C COUPLER Isolation test voltage VISO 5300 VRMS Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Creepage distance ≥ 7.0 mm Clearance distance ≥ 7.0 mm Total package dissipation Ptot 400 mW Derate linearly from 25 °C 5.33 mW/°C Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Lead soldering time at 260 °C 10 s ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 20 mA VF 1.25 1.50 V Reverse current VR = 3.0 V IR 0.1 10 µA Junction capacitance VF = 0 V Cj 25 pF OUTPUT Collector emitter breakdown voltage IC = 1.0 µA, IE = 10 µA BVCEO 30 65 V Emitter collector breakdown voltage IC = 10 μA, IE = 10 µA BVECO 7.0 10 V Collector emitter leakage current VCE = 10 V ICEO 1.0 100 nA Collector emitter capacitance VCE = 0 V CCE 8.0 pF COUPLER Saturation voltage, collector emitter IC = 2.0 mA, IF = 16 mA VCEsat 0.40 V Capacitance (input to output) f = 1.0 MHz CIO 0.5 pF Capacitance between channels f = 1.0 MHz 0.4 pF Bandwidth IC = 2.0 mA, VCC = 10 V, RL = 100 Ω 150 kHz |
Аналогичный номер детали - ILCT6 |
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Аналогичное описание - ILCT6 |
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