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SIHLU110-E3 датащи(PDF) 1 Page - Vishay Siliconix

номер детали SIHLU110-E3
подробное описание детали  Power MOSFET
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIHLU110-E3 датащи(HTML) 1 Page - Vishay Siliconix

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Document Number: 91323
www.vishay.com
S-81304-Rev. A, 16-Jun-08
1
Power MOSFET
IRLR110, IRLU110, SiHLR110, SiHLU110
Vishay Siliconix
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRLR110/SiHLR110)
• Straight Lead (IRLU110/SiHLU110)
• Available in Tape and Reel
• Logic-Level Gate Drive
•RDS(on) Specified at VGS = 4 V and 5 V
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
device
design,
low
on-resistance
and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRLU/SiHLU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 8.1 mH, RG = 25 Ω, IAS = 4.3 A (see fig. 12).
c. ISD ≤ 5.6 A, dI/dt ≤ 140 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARY
VDS (V)
100
RDS(on) (Ω)VGS = 5.0 V
0.54
Qg (Max.) (nC)
6.1
Qgs (nC)
2.0
Qgd (nC)
3.3
Configuration
Single
N-Channel MOSFET
G
D
S
DPAK
(TO-252)
IPAK
(TO-251)
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
DPAK (TO-252)
DPAK (TO-252)
DPAK (TO-252)
IPAK (TO-251)
Lead (Pb)-free
IRLR110PbF
IRLR110TRLPbFa
-
IRLU110PbF
SiHLR110-E3
SiHLR110TL-E3a
-
SiHLU110-E3
SnPb
IRLR110
IRLR110TRLa
IRLR110TRa
IRLU110
SiHLR110
SiHLR110TLa
SiHLR110Ta
SiHLU110
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
100
V
Gate-Source Voltage
VGS
± 10
Continuous Drain Current
VGS at 5.0 V
TC = 25 °C
ID
4.3
A
TC = 100 °C
2.7
Pulsed Drain Currenta
IDM
17
Linear Derating Factor
0.20
W/°C
Linear Derating Factor (PCB Mount)e
0.020
Single Pulse Avalanche Energyb
EAS
100
mJ
Repetitive Avalanche Currenta
IAR
4.3
A
Repetitive Avalanche Energya
EAR
2.5
mJ
Maximum Power Dissipation
TC = 25 °C
PD
25
W
Maximum Power Dissipation (PCB Mount)e
TA = 25 °C
2.5
Peak Diode Recovery dV/dtc
dV/dt
5.5
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
for 10 s
260d
* Pb containing terminations are not RoHS compliant, exemptions may apply


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