поискавой системы для электроныых деталей |
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SI1021R-T1-E3 датащи(PDF) 2 Page - Vishay Siliconix |
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SI1021R-T1-E3 датащи(HTML) 2 Page - Vishay Siliconix |
2 / 5 page www.vishay.com 2 Document Number: 71410 S-81543-Rev. D, 07-Jul-08 Vishay Siliconix Si1021R Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 10 µA - 60 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = - 0.25 mA - 1 - 3.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 10 µA VDS = 0 V, VGS = ± 10 V ± 200 nA VDS = 0 V, VGS = ± 10 V, TJ = 85 °C ± 500 VDS = 0 V, VGS = ± 5 V ± 100 Zero Gate Voltage Drain Current IDSS VDS = - 50 V, VGS = 0 V - 25 VDS = - 50 V, VGS = 0 V, TJ = 85 °C -250 On-State Drain Currenta ID(on) VDS = -10 V, VGS = - 4.5 V - 50 mA VDS = -10 V, VGS = - 10 V - 600 Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 25 mA 8 Ω VGS = - 10 V, ID = - 500 mA 4 VGS = - 10 V, ID = - 500 mA, TJ = 125 °C 6 Forward Transconductance gfs VDS = - 10 V, ID = - 100 mA 80 mS Diode Forward Voltagea VSD VDS = - 200 mA, VGS = 0 V 80 V Dynamic Total Gate Charge Qg VDS = - 30 V, VGS = - 15 V, ID ≅ - 500 mA 1.7 nC Gate-Source Charge Qgs 0.26 Gate-Drain Charge Qgd 0.46 Input Capacitance Ciss VDS = - 25 V, VGS = 0 V, f = 1 MHz 23 pF Output Capacitance Coss 10 Reverse Transfer Capacitance Crss 5 Switchingb Turn-On Time tON VDD = - 25 V, RL = 150 Ω, ID ≅ - 200 mA, VGEN = - 10 V, RG = 10 Ω 20 ns Turn-Off Time tOFF 35 |
Аналогичный номер детали - SI1021R-T1-E3 |
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Аналогичное описание - SI1021R-T1-E3 |
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