поискавой системы для электроныых деталей |
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SI5404BDC-T1-E3 датащи(PDF) 1 Page - Vishay Siliconix |
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SI5404BDC-T1-E3 датащи(HTML) 1 Page - Vishay Siliconix |
1 / 6 page FEATURES D TrenchFETr Power MOSFET Si5404BDC Vishay Siliconix New Product Document Number: 73102 S-41826—Rev. A, 11-Oct-04 www.vishay.com 1 N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) Qg (Typ) 20 0.028 @ VGS = 4.5 V 7.5 63 20 0.039 @ VGS = 2.5 V 6.3 6.3 1206-8 ChipFE Tr D D D G D D D S 1 Bottom View Marking Code AE XXX Lot Traceability and Date Code Part # Code N-Channel MOSFET G D S Ordering Information: Si5404BDC-T1—E3 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS "12 V Continuous Drain Current (TJ = 150_C)a TA = 25_C ID 7.5 5.4 Continuous Drain Current (TJ = 150_C)a TA = 85_C ID 5.4 3.9 A Pulsed Drain Current IDM 20 A Continuous Source Current (Diode Conduction)a IS 2.1 1.1 Maximum Power Dissipationa TA = 25_C PD 2.5 1.3 W Maximum Power Dissipationa TA = 85_C PD 1.3 0.7 W Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 _C Soldering Recommendations (Peak Temperature)b, c 260 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Mi J ti t A bi ta t v 5 sec R 45 50 Maximum Junction-to-Ambienta Steady State RthJA 80 95 _C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 18 22 C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon- nection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. |
Аналогичный номер детали - SI5404BDC-T1-E3 |
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Аналогичное описание - SI5404BDC-T1-E3 |
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