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SI5856DC-T1-E3 датащи(PDF) 2 Page - Vishay Siliconix |
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SI5856DC-T1-E3 датащи(HTML) 2 Page - Vishay Siliconix |
2 / 7 page Si5856DC Vishay Siliconix www.vishay.com 2 Document Number: 72234 S-50366—Rev. C, 28-Feb-05 THERMAL RESISTANCE RATINGS Parameter Device Symbol Typical Maximum Unit t 5 MOSFET 50 60 Jti t A bi ta t v 5 sec Schottky R 54 65 Junction-to-Ambienta St d St t MOSFET RthJA 90 110 _C/W Steady State Schottky 95 115 _C/W Junction to Foot Steady State MOSFET R 30 40 Junction-to-Foot Steady State Schottky RthJF 30 40 Notes a. Surface Mounted on 1” x 1” FR4 Board. MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.4 1.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 mA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V, TJ = 85_C 5 mA On-State Drain Currenta ID(on) VDS w 5 V, VGS = 4.5 V 20 A VGS = 4.5 V, ID = 4.4 A 0.032 0.040 Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 4.1 A 0.036 0.045 W Drain Source On State Resistance rDS(on) VGS = 1.8 V, ID = 1.9 A 0.042 0.052 W Forward Transconductancea gfs VDS = 10 V, ID = 4.4 A 22 S Diode Forward Voltagea VSD IS = 1.0 A, VGS = 0 V 0.8 1.2 V Dynamicb Total Gate Charge Qg 5 7.5 Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 4.4 A 0.85 nC Gate-Drain Charge Qgd DS , GS , D 1 Turn-On Delay Time td(on) 20 30 Rise Time tr VDD = 10 V, RL = 10 W 36 55 Turn-Off Delay Time td(off) VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W 30 45 ns Fall Time tf 12 20 ns Source-Drain Reverse Recovery Time trr IF = 0.9 A, di/dt = 100 A/ms 45 90 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%, b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Forward Voltage Drop VF IF = 1.0 0.34 0.375 V Forward Voltage Drop VF IF = 1.0, TJ = 125_C 0.255 0.290 V Vr = 20 V 0.05 0.500 Maximum Reverse Leakage Current Irm Vr = 20 V, TJ = 85_C 2 20 mA Maximum Reverse Leakage Current Irm Vr = 20 V, TJ = 125_C 10 100 mA Junction Capacitance CT Vr = 10 V 90 pF |
Аналогичный номер детали - SI5856DC-T1-E3 |
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Аналогичное описание - SI5856DC-T1-E3 |
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