TSDF1205R datasheet(3/7 Pages) VISHAY

номер детали	TSDF1205R

подробное описание детали	12 GHz Silicon NPN Planar RF Transistor

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производитель	VISHAY [Vishay Siliconix]

домашняя страница	http://www.vishay.com

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TSDF1205 / 1205R / 1205W / 1205RW

Document Number 85065

Rev. 1.7, 08-Sep-08

Vishay Semiconductors

www.vishay.com

3

Electrical AC Characteristics

Tamb = 25 °C, unless otherwise specified

Typical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Transition frequency

VCE = 2 V, IC = 5 mA, f = 1 GHz

fT

12

GHz

Collector-base capacitance

VCB = 1 V, f = 1 MHz

Ccb

0.2

pF

Collector-emitter capacitance

VCE = 1 V, f = 1 MHz

Cce

0.35

pF

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb

0.15

pF

Noise figure

VCE = 2 V, IC = 2 mA, ZS = ZSopt,

ZL = 50 Ω, f = 2 GHz

F1.3

dB

Power gain

VCE = 2 V, IC = 2 mA, f = 2 GHz

(at Fopt)

Gpe

13

dB

VCE = 2 V, IC = 5 mA, ZS = ZSopt,

ZL = 50 Ω f = 2 GHz

Gpe

11.5

dB

Transducer gain

VCE = 2 V, IC = 5 mA, Z0 = 50 Ω,

f = 2 GHz

|S21e|

2

12.5

dB

Figure 1. Total Power Dissipation vs. Ambient Temperature

Figure 2. Transition Frequency vs. Collector Current

0

20

40

60

80

100

0

204060

80

100 120 140 160

Tamb -Ambient Temperature (°C)

14284

0

2

4

6

8

10

12

14

16

0246

8

10

12

14

IC - Collector Current (mA)

14285

f=1GHz

VCE =3 V

VCE =2 V

Figure 3. Collector Base Capacitance vs. Collector Base Voltage

Figure 4. Noise Figure vs. Collector Current

0.0

0.1

0.2

0.3

0.4

0.5

012345

VCB - Collector Base Voltage (V)

14286

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0123456

IC - Collector Current (mA)

14287

VCE =2 V

f=2GHz

ZS =50

Ω

Аналогичный номер детали - TSDF1205R

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Vishay Siliconix	TSDF1205R	81Kb / 6P	Silicon NPN Planar RF Transistor Rev. 5, 30-Jun-00
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Аналогичное описание - TSDF1205R

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