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TSHF5410 датащи(PDF) 1 Page - Vishay Siliconix |
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TSHF5410 датащи(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Document Number: 81303 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev. 1.2, 04-Sep-08 179 High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero TSHF5410 Vishay Semiconductors DESCRIPTION TSHF5410 is an infrared, 890 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): ∅ 5 • Leads with stand-off • Peak wavelength: λ p = 890 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 22° • Low forward voltage • Suitable for high pulse current operation • High modulation bandwidth: fc = 12 MHz • Good spectral matching with Si photodetectors • Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC APPLICATIONS • Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements • Transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK/FSK - coded, 450 kHz or 1.3 MHz) Note Test conditions see table “Basic Characteristics” Note MOQ: minimum order quantity 94 8390 PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λ P (nm) tr (ns) TSHF5410 70 ± 22 890 30 ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSHF5410 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5V Forward current IF 100 mA Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 mA Surge forward current tp = 100 µs IFSM 1.5 A Power dissipation PV 160 mW |
Аналогичный номер детали - TSHF5410 |
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Аналогичное описание - TSHF5410 |
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