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TSKS5400S датащи(PDF) 1 Page - Vishay Siliconix |
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TSKS5400S датащи(HTML) 1 Page - Vishay Siliconix |
1 / 6 page Document Number: 81074 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev. 1.6, 05-Sep-08 219 Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs TSKS5400S Vishay Semiconductors DESCRIPTION The TSKS5400S is an infrared, 950 nm emitting diode in GaAs technology with high radiant power, molded in a clear plastic package. FEATURES • Package type: leaded • Package form: side view lens • Dimensions (L x W x H in mm): 5 x 2.65 x 5 • Peak wavelength: λ p = 950 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 30° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Package matched with detector TEKS5400 • Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC APPLICATIONS • Photointerrupters • Transmissive sensors, gap sensors • Reflective sensors Note Test conditions see table “Basic Characteristics” Note MOQ: minimum order quantity Note Tamb = 25 °C, unless otherwise specified 14354 PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λ P (nm) tr (ns) TSKS5400S 4.5 ± 30 950 800 ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSKS5400S Bulk MOQ: 2000 pcs, 2000 pcs/bulk Side view lens ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 6V Forward current IF 100 mA Surge forward current tp ≤ 100 µs IFSM 2A Power dissipation PV 170 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 25 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature t ≤ 5 s, 2 mm from case Tsd 260 °C Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB RthJA 270 K/W |
Аналогичный номер детали - TSKS5400S_08 |
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Аналогичное описание - TSKS5400S_08 |
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