поискавой системы для электроныых деталей |
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SMBG60 датащи(PDF) 4 Page - Vishay Siliconix |
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SMBG60 датащи(HTML) 4 Page - Vishay Siliconix |
4 / 6 page SMBG5.0 thru SMBG188CA Vishay General Semiconductor www.vishay.com For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88456 Revision: 22-Oct-08 4 Note: (1) Mounted on minimum recommended pad layout Note: (1) Automotive grade AEC Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Typical thermal resistance, junction to ambient (1) RθJA 100 °C/W Typical thermal resistance, junction to lead RθJL 20 °C/W ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SMBG5.0A-E3/52 0.096 52 750 7" diameter plastic tape and reel SMBG5.0A-E3/5B 0.096 5B 3200 13" diameter plastic tape and reel SMBG5.0AHE3/52 (1) 0.096 52 750 7" diameter plastic tape and reel SMBG5.0AHE3/5B (1) 0.096 5B 3200 13" diameter plastic tape and reel Figure 1. Peak Pulse Power Rating Curve Figure 2. Pulse Power or Current vs. Initial Junction Temperature 0.1 1 10 100 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas td - Pulse Width (s) 0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms 0 255075 100 100 75 50 25 0 125 150 175 200 TJ - Initial Temperature (°C) Figure 3. Pulse Waveform Figure 4. Typical Junction Capacitance 0 50 100 150 t d 0 1.0 2.0 3.0 4.0 t - Time (ms) t r = 10 µs Peak Value I PPM Half Value - I PPM I PP 2 10/1000 µs Waveform as defined by R.E.A. T J = 25 °C Pulse Width (t d) is defined as the Point where the Peak Current decays to 50 % of I PPM 10 100 1000 6000 10 1 100 200 Uni-Directional Bi-Directional T J = 25 °C f = 1.0 MHz V sig = 50 mVp-p Measured at Zero Bias V R, Measured at Stand-Off Voltage V WM VWM - Reverse Stand-Off Voltage (V) |
Аналогичный номер детали - SMBG60 |
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Аналогичное описание - SMBG60 |
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