поискавой системы для электроныых деталей |
|
SA01-6 датащи(PDF) 2 Page - Cirrus Logic |
|
SA01-6 датащи(HTML) 2 Page - Cirrus Logic |
2 / 4 page APEX MICROTECHNOLOGY CORPORATION • 5980 NORTH SHANNON ROAD • TUCSON, ARIZONA 85741 • USA • APPLICATIONS HOTLINE: 1 (800) 546-2739 2 ABSOLUTE MAXIMUM RATINGS SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS SUPPLY VOLTAGE, +V S 100V OUTPUT CURRENT, peak 30A POWER DISSIPATION, internal 185W1 TEMPERATURE, pin solder - 10s 300°C TEMPERATURE, junction2 150°C TEMPERATURE, storage –65 to +150°C OPERATING TEMPERATURE RANGE, case –55 to +125°C SHUTDOWN VOLTAGE 10V REFERENCE LOAD CURRENT 10mA ERROR AMP INPUT ± 0 to +12V SA01 • SA01-6 SPECIFICATIONS SA01 SA01-6 PARAMETER TESTCONDITIONS2 MIN TYP MAX MIN TYP MAX UNITS ERRORAMP OFFSET VOLTAGE, initial T C = 25°C 10 * mV OFFSET VOLTAGE, vs. temperature Full Temperature Range5 50 50 µV/°C BIAS CURRENT, initial T C = 25°C 5 * µA BIAS CURRENT, vs. temperature Full Temperature Range5 400 400 nA/°C OFFSET CURRENT, initial T C = 25°C 1 * µA OFFSET CURRENT, vs. temperature Full Temperature Range5 80 80 nA/°C COMMON MODE VOLTAGE RANGE4 2 8 * * V COMMON MODE REJECTION, DC4 75 * dB SLEW RATE 15 * V/µS OPEN LOOP GAIN4 75 * dB GAIN BANDWIDTH PRODUCT 2 * MHz OUTPUT TOTAL R ON .25 * Ω EFFICIENCY, 10A OUTPUT V S = 100V 97 * % SWITCHING FREQUENCY Full temperature range5 35.3 42 48.7 35 42 49 KHz CURRENT, continuous4 20 * A CURRENT, peak4 30 * A REFERENCE VOLTAGE I REF = 5mA 7.46 7.50 7.54 * * * V VOLTAGE VS. TEMP Full temperature range5 50 50 PPM/°C OUTPUT CURRENT 5 5 mA LOAD REGULATION4 20 50 * * PPM/mA LINE REGULATION 1 * PPM/V POWERSUPPLY VOLTAGE Full temperature range5 16 50 100 16 50 100 V CURRENT I OUT = 0, IREF = 0, 76 90 76 93 mA Full temperature range5 CURRENT, shutdown I REF = 0 25 * mA SHUTDOWN TRIP POINT .18 .22 * * V INPUT CURRENT 100 * nA THERMAL2 RESISTANCE, junction to case4 Full temp range, for each transistor 1.0 * °C/W RESISTANCE, junction to air4 Full temperature range 12 * °C/W TEMPERATURE RANGE, case Meets full range specifications5 –25 +85 –55 125 °C The SA01 is constructed from MOSFET transistors. ESD handling procedures must be observed. The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or subject to temperatures in excess of 850°C to avoid generating toxic fumes. CAUTION NOTES: 1. Each of the two active output transistors can dissipate 125W, however the N-channel will be about 1/3 of the total dissipated power. Internal connection resistance is .05Ω. 2. Unless otherwise noted: T C = 25°C. 3. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation to achieve high MTTF. For guidance, refer to the heatsink data sheet. 4. Guaranteed but not tested. 5. Full temperature range specifications apply to the operating case temperature range as specified under THERMAL. For the SA01 these specifications are guaranteed but not tested. For the SA01-6 these specifications are tested over the SA01-6 operating case temperature range. |
Аналогичный номер детали - SA01-6 |
|
Аналогичное описание - SA01-6 |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |