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IRF5N60 датащи(PDF) 1 Page - Suntac Electronic Corp. |
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IRF5N60 датащи(HTML) 1 Page - Suntac Electronic Corp. |
1 / 5 page IRF5N60 POWER MOSFET Page 1 GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS Specified at Elevated Temperature PIN CONFIGURATION SYMBOL T TO-220FP Front View 1 23 D S G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain to Current Continuous Pulsed ID IDM 5.0 20 A Gate-to-Source Voltage Continue Non-repetitive VGS VGSM ±20 ±40 V V Operating and Storage Temperature Range TJ, TSTG -55 to 150 Single Pulse Drain-to-Source Avalanche Energy TJ = 25 (VDD = 100V, VGS = 10V, IL = 7A, L = 10mH, RG = 25 ) EAS 245 mJ Thermal Resistance Junction to Case Junction to Ambient JC JA 1.0 62.5 /W Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds TL 260 (1) Pulse Width and frequency is limited by TJ(max) and thermal response Total Power Dissipation Derate above 25 PD 35 0.28 W W/ |
Аналогичный номер детали - IRF5N60 |
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Аналогичное описание - IRF5N60 |
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