STC733 datasheet(2/3 Pages) SUNTAC

номер детали	STC733

подробное описание детали	PNP Silicon Transistor

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KST-9074-000

2

STC733

Absolute maximum ratings

(Ta=25

°°°°C)

Characteristic

Symbol

Ratings

Unit

Collector-Base voltage

VCBO

-50

V

Collector-Emitter voltage

VCEO

-40

V

Emitter-Base voltage

VEBO

-5

V

Collector current

IC

-150

mA

Collector dissipation

PC

625

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

-55~150

°C

Electrical Characteristics

(Ta=25

°°°°C)

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Collector-Base breakdown voltage

BV

CBO

I

C=-50µA, IE=0

-50

-

V

Collector-Emitter breakdown voltage

BV

CEO

I

C=-1mA, IB=0

-40

-

V

Emitter-Base breakdown voltage

BV

EBO

I

E=-50µA, IC=0

-5

-

V

Collector cut-off current

I

CBO

V

CB=-50V, IE=0

-

-0.1

µA

Emitter cut-off current

I

EBO

V

EB=-5V, IC=0

-

-0.1

µA

DC current gain

h

FE

*

V

CE=-6V, IC=-2mA

70

-

700

-

Collector-Emitter saturation voltage

V

CE(sat)

I

C=-100mA, IB=-10mA

-

-0.3

V

Transition frequency

f

T

V

CE=-10V, IC=-1mA

80

-

MHz

Collector output capacitance

C

ob

V

CB=-10V, IE=0, f=1MHz

-

4

7

pF

Noise figure

NF

V

CE=-6V, IC=-0.1mA

f=1KHz, Rg=10K

--

10

dB

*: h

FE rank / O : 70~140, Y : 120~240, G : 200~400, L : 300~700.

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