BF622 datasheet(2/2 Pages) KEXIN

номер детали	BF622

подробное описание детали	Silicon NPN epitaxial planer type

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SMD Type

Transistors

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Electrical Characteristics Ta = 25

unless otherwise specified.

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

IE =0; VCB = 200 V

10

nA

IE =0; VCB = 200 V; Tj = 150

10

mA

emitter cut-off current

IEBO

IC =0; VEB =5V

50

nA

DC current gain

hFE

IC =25mA; VCE =20V

50

collector-emitter saturation voltage

VCEsat

IC =30mA; IB = 5 mA

600

mV

feedback capacitance

Cre

IC =ic =0; VCE =30V; f = 1MHz

1.6

pF

transition frequency

fT

IC =10mA; VCE = 10 V;f= 100 MHz

60

MHz

collector cut-off current

V(BR)CBO

Marking

Type Number

BF620

BF622

Marking

DC

DA

BF620; BF622

Аналогичный номер детали - BF622

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	BF622	40Kb / 8P	NPN high-voltage transistors 1999 Apr 21
Siemens Semiconductor G...	BF622	129Kb / 4P	NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
List of Unclassifed Man...	BF622	34Kb / 2P	The Small-signal NPN Silicon High Voltage Medium-Power Transistor
NXP Semiconductors	BF622	131Kb / 10P	NPN high-voltage transistors 2004 Dec 14
Shenzhen Jin Yu Semicon...	BF622	265Kb / 1P	TRANSISTOR (NPN)

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Аналогичное описание - BF622

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Panasonic Semiconductor	2SD2184	38Kb / 2P	Silicon NPN epitaxial planer type(Silicon NPN epitaxial planer type)
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	UN921MJ	315Kb / 18P	Silicon NPN epitaxial planer type
	2SC1215	62Kb / 3P	Silicon NPN epitaxial planer type
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