2SA1252 datasheet(1/1 Pages) KEXIN

номер детали	2SA1252

подробное описание детали	PNP Epitaxial Planar Silicon Transistors

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производитель	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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SMD Type

IC

www.kexin.com.cn

1

SMD Type

Transistors

0.4+0.1

-0.1

2.9+0.1

-0.1

0.95+0.1

-0.1

1.9+0.1

-0.1

1.Base

2.Emitter

3.collector

12

3

Unit: mm

SOT-23

0.1+0.05

-0.01

PNP Epitaxial Planar Silicon Transistors

2SA1252

Features

High VEBO.

Wide ASO and high durability against breakdown.

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cutoff current

IcBO

VCB = -40V , IE =0

-0.1

ìA

Emitter cutoff current

IEBO

VEB = -10V , IC =0

-0.1

ìA

DC current Gain

hFE

VCE =-6V , IC = -1mA

90

560

Gain bandwidth product

fT

VCE =-6V , IC = -1mA

100

MHz

Output capacitance

Cob

VCB = -6V , f = 1MHz

3.5

pF

Collector-emitter saturation voltage

VCE(sat) IC = -50mA , IB = -5mA

-0.5

V

Collector-base breakdown voltage

V(BR)CBO IC = -10ìA , IE =0

-60

V

Collector-emitter breakdown voltage

V(BR)CEO IC =-1mA , RBE =

-50

V

Emitter-base breakdown voltage

V(BR)EBO IE = -10ìA , IC =0

-15

V

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

-60

V

Collector-emitter voltage

VCEO

-50

V

Emitter-base voltage

VEBO

-15

V

Collector current

IC

-150

mA

Collector current (pulse)

ICP

-300

mA

Collector dissipation

PC

200

mW

Jumction temperature

Tj

125

Storage temperature

Tstg

-55to+125

hFE Classification

Marking

D4D5D6

D7

hFE

90 180

135 270

200 400

300 600

Аналогичный номер детали - 2SA1252

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Аналогичное описание - 2SA1252

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