KDB7045L datasheet(2/2 Pages) KEXIN

номер детали	KDB7045L

подробное описание детали	N-Channel Logic Level PowerTrench MOSFET

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SMD Type

IC

SMD Type

Transistors

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

BVDSS

VGS =0V, ID = 250

A

30

V

Breakdown Voltage Temperature Coefficient

ID = 250

A, Referenced to 25

22

mV/

Zero Gate Voltage Drain Current

IDSS

VDS =24V, VGS =0V

1

A

Gate-Body Leakage, Forward

IGSSF

VGS =20V, VDS = 0 V

100

nA

Gate-Body Leakage, Reverse

IGSSR

VGS =-20 V, VDS = 0 V

-100

nA

Gate Threshold Voltage

VGS(th)

VDS =VGS,ID = 250

A

11.5

3

V

Gate Threshold Voltage Temperature

Coefficient

ID = -250

A, Referenced to 25

-5

mV/

VGS =10V, ID = 50 A

0.0039

0.0045

VGS =10V, ID =50A, TJ = 125

0.0056

0.0070

VGS =4.5 V, ID = 40 A

0.0048

0.0060

On-State Drain Current

ID(on)

VGS =10V, VDS =10V

50

A

Forward Transconductance

gFS

VDS =5V, ID =50A

120

S

Input Capacitance

Ciss

5400

pF

Output Capacitance

Coss

1170

pF

Reverse Transfer Capacitance

Crss

530

pF

Turn-On Delay Time

td(on)

14

30

ns

Turn-On Rise Time

tr

114

160

ns

Turn-Off Delay Time

td(off)

105

150

ns

Turn-Off Fall Time

tf

115

160

ns

Total Gate Charge

Qg

50

70

nC

Gate-Source Charge

Qgs

16

nC

Gate-Drain Charge

Qgd

16

nC

Maximum Continuous Drain–Source Diode

Forward Current *

IS

75

A

Drain-Source Diode Forward Voltage

VSD

VGS =0V, IS = 50 A *

0.95

1.2

V

* Pulse Test: Pulse Width

300

s, Duty Cycle

2.0%

VDS =15V, ID =50A,VGS =5V *

m

VDD =15V, ID =50A,VGS =10V,

RGEN =10

,RGS=10

*

Static Drain-Source On-Resistance

RDS(on)

VDS =15V, VGS =0V,f = 1.0MHz

KDB7045L

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Аналогичный номер детали - KDB7045L

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