2SA1162 datasheet(1/2 Pages) KEXIN

номер детали	2SA1162

подробное описание детали	Silicon PNP Epitaxial Type Transistor

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SMD Type

Transistors

1

0.4+0.1

-0.1

2.9+0.1

-0.1

0.95+0.1

-0.1

1.9+0.1

-0.1

1.Base

2.Emitter

3.collector

12

3

Unit: mm

SOT-23

0.1+0.05

-0.01

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Silicon PNP Epitaxial Type Transistor

2SA1162

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

-50

V

Collector-emitter voltage

VCEO

-50

V

Emitter-base voltage

VEBO

-5

V

Collector current

IC

-150

mA

Base current

IB

-30

mA

Collector power dissipation

PC

150

mW

Junction temperature

Tj

125

Storage temperature range

Tstg

-55to+125

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cut-off current

ICBO

VCB =-50 V, IE =0

-0.1

A

Emitter cut-off current

IEBO

VEB =-5V,IC =0

-0.1

A

DC current gain

hFE

VCE =-6V,IC = -2 mA

70

400

Collector-emitter saturation voltage

VCE (sat) IC = -100 mA, IB = -10 mA

-0.1

-0.3

V

Collector output capacitance

Cob

VCB =-10 V, IE =0,f=1MHz

4

7

pF

VCE =-6V,IC =-0.1mA,f=1kHz,

Rg = 10 k

Transition frequency

fT

VCE =-10 V, IC =-1mA

80

MHz

dB

Noise figure

NF

1.0

10

hFE Classification

Marking

SO

SY

SR

Rank

O

Y

GR

hFE

70

140

120

240

200

400

Features

High voltage and high current: VCEO =-50 V, IC = ?150 mA (max)

Low noise: NF = 1dB (typ.), 10dB (max)

Small package

Аналогичный номер детали - 2SA1162

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