SMD Type

MOSFET

1

-0.1

-0.1

-0.1

-0.1

1.Base

2.Emitter

3.collector

12

3

Unit: mm

SOT-23

-0.01

1GATE

2 SOURCE

3 DRAIN

www.kexin.com.cn

MOS Field Effect Transistor

2SK1399

Features

Can be driven by a 3.0-V power source

Not necessary to consider driving current because of it is high input

impedance

Possible to reduce the number of parts by omitting the bias resistor

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Drain to source voltage

50

V

Gate to source voltage

7.0

V

Drain current (DC)

100

mA

Drain current(pulse) *

200

mA

Power dissipation

200

m W

Channel temperature

150

Storage temperature

-55to+150

*PW

10ms, duty cycle

5%

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Drain cut-off current

10

A

Gate leakage current

5.0

A

Gate to source cutoff voltage

A

0.9

1.2

1.5

V

Forward transfer admittance

20

38

ms

22

40

14

20

Input capacitance

8pF

Output capacitance

7pF

Reverse transfer capacitance

3pF

Turn-on delay time

15

ns

Rise time

100

ns

Turn-off delay time

30

ns

Fall time

35

ns

Drain to source on-state resistance

Marking

Marking

G12