LS4448 datasheet(2/4 Pages) VISHAY

номер детали	LS4448

подробное описание детали	Silicon Epitaxial Planar Diodes

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LS4148.LS4448

Vishay Telefunken

Rev. 3, 01-Apr-99

2 (4)

www.vishay.de

• FaxBack +1-408-970-5600

Document Number 85561

Electrical Characteristics

Tj = 25_C

Parameter

Test Conditions

Type

Symbol

Min

Typ

Max

Unit

Forward voltage

IF=5mA

LS4448

VF

0.62

0.72

V

g

IF=50mA

LS4148

VF

0.86

1

V

IF=100mA

LS4448

VF

0.93

1

V

Reverse current

VR=20V

IR

25

nA

VR=20V, Tj=150°C

IR

50

mA

VR=75V

IR

5

mA

Breakdown voltage

IR=100mA, tp/T=0.01,

tp=0.3ms

V(BR)

100

V

Diode capacitance

VR=0, f=1MHz, VHF=50mV

CD

4

pF

Rectification efficiency

VHF=2V, f=100MHz

hr

45

%

Reverse recovery time

IF=IR=10mA, iR=1mA

trr

8

ns

y

IF=10mA, VR=6V, iR=0.1xIR,

RL=100W

trr

4

ns

Characteristics (Tj = 25_C unless otherwise specified)

0

0.4

0.8

1.2

1.6

0.1

1

10

100

1000

VF – Forward Voltage ( V )

2.0

94 9096

LL 4148

Scattering Limit

Tj =25°C

Figure 1. Forward Current vs. Forward Voltage

0

0.4

0.8

1.2

1.6

0.1

1

10

100

1000

VF – Forward Voltage ( V )

2.0

94 9097

LL 4448

Scattering Limit

Tj =25°C

Figure 2. Forward Current vs. Forward Voltage

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