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2N4401 датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

номер детали 2N4401
подробное описание детали  NPN Transistor Plastic-Encapsulate Transi stors
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производитель  SECOS [SeCoS Halbleitertechnologie GmbH]
домашняя страница  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

2N4401 датащи(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
2N4401
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
4.55±0.2
3.5±0.2
2.54±0.1
(1.27 Typ.)
0.46+0.1
–0.1
0.43+0.08
–0.07
1
3
2
1: Emitter
2: Base
3: Collector
1.25–0.2
+0.2
TO-92
Features
Power Dissipation
01-Jun-2002 Rev. A
Page 1 of 2
NPN Transistor
Plastic-Encapsulate Transistors
MAXIMUM RATINGS* TA=25 C unless otherwise noted
ELECTRICAL CHARACTERISTICS ( Tamb=25 C
unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=100µA , IE
60
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 1mA , IB=0
40
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA, IC=0
6
V
Collector cut-off current
ICBO
VCB=35V, IE=0
0.1
µA
Collector cut-off current
ICEO
VCE=35V, IB=0
0.5
µA
Emitter cut-off current
IEBO
VEB=5V, IC=0
0.1
µA
hFE(1)
VCE=1V, IC= 0.1mA
20
hFE(2)
VCE=1V, IC=1mA
hFE(3)
VCE=1V, IC= 10mA
50
hFE(4)
VCE=1V, IC=150mA
300
DC current gain
hFE(5)
VCE=2V, IC= 500mA
40
VCE(sat)1
IC=150 mA, IB=15mA
0.4
V
Collector-emitter saturation voltage
VCE(sat)2
IC=500 mA, IB=50mA
0.75
V
VBE(sat)1
IC=150 mA, IB=15mA
0.95
V
Base-emitter saturation voltage
VBE(sat)2
IC=500 mA, IB=50mA
V
Transition frequency
f T
VCE= 10V, IC= 20mA,
f=100MHz
250
MHz
Output Capacitance
Cob
VCB=10V, IE= 0,f=1MHz
6.5
pF
V
mA
W
C
o
C
o
C
o
o
o
=0
40
100
Delay time
td
15
nS
Rise time
tr
VCC=30V, VBE=2V
IC=150mA, IB1=15mA
20
nS
Storage time
tS
225
nS
Fall time
tf
VCC=30V, IC=150mA
IB1= IB2= 15mA
30
nS
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
60
VCEO
Collector-Emitter Voltage
40
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
600
P C *
Collector Power dissipation
0.625
TJ
Junction Temperature
150
Tstg
Storage Temperature
-55to +150
R
θJA
Thermal Resistance, junction to Ambient
357
/mW
V
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free


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