поискавой системы для электроныых деталей |
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2SC3356F датащи(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SC3356F датащи(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
1 / 2 page Elektronische Bauelemente 2SC3356F NPN Silicon Plastic Encapsulated Transistor 01-June-2002 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H J F K E 1 2 3 1 2 3 2 Emitter 1 Base Collector 3 FEATURES Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain MARKING R ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3 V Collector Current - Continuous IC 0.1 A Total Device Dissipation PC 200 mW Junction and Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector–Base Breakdown Voltage BVCBO 20 - - V IC=10μA, IE=0 Collector–Emitter Breakdown Voltage BVCEO 12 - - V IC= 1mA, IB=0 Collector Cut-off Current Emitter Cut-off Current ICBO IEBO - - 1 1 μA μA VCB=10V, IE=0 VEB=1V, IC=0 DC Current Gain hFE* 50 - 250 VCE=10V, IC= 20mA Transition Frequency fT - 7 - GHz VCE=10V, IC= 20mA Collector Output Capacitance NF - - 2 dB VCE=10V, IC= 7mA, f = 1GHz *pulse test: pulse width ≤ 350μs, Duty cycle ≤ 2% CLASSIFICATION OF hFE Rank Q R S Coding 23 24 25 Range 50 - 100 80 - 160 125 – 250 Marking R23 R24 R25 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 = hFE Coding Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 1.80 2.20 G 0.100 REF. B 1.80 2.45 H 0.525 REF. C 1.15 1.35 J 0.08 0.25 D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. F 0.20 0.40 |
Аналогичный номер детали - 2SC3356F |
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Аналогичное описание - 2SC3356F |
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