поискавой системы для электроныых деталей |
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BAT54H датащи(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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BAT54H датащи(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 2 page Any changing of specification will not be informed individual BAT54H 30 Volt Silicon Hot-Carrier Detector Surface Mount Schottky Barrier Diode Notes: 1. A 2.0 k Ω variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr +10 V 2 k 820 Ω 0.1 µF DUT VR 100 µH 0.1 µF 50 Ω Οutput Pulse Generator 50 Ω Input Sampling Oscilloscope tr tp t 10% 90% IF IR trr t IR(REC) = 1 mA Output Pulse (IF = IR = 10 mA; measured at IR(REC) = 1 mA) IF Input Signal Figure 1. Recovery Time Equivalent Test Circuit 100 0.0 0.1 VF, Forward Voltage (V) 0.2 0.3 0.4 0.5 10 1.0 0.1 85 °C 10 0 VR, Reverse Voltage (V) 1.0 0.1 0.01 0.001 510 15 20 25 14 0 VR, Reverse Voltage (V) 12 4 2 0 510 15 30 Figure 2. Forward Voltage Figure 3. Leakage Current Figure 4. Total Capacitance –40 °C 25 °C TA = 150°C TA = 125°C TA = 85°C TA = 25°C 0.6 – 55 °C 150 °C 125 °C 100 1000 30 25 20 6 8 10 http://www.SeCoSGmbH.com Elektronische Bauelemente 01-Jun-2005 Rev. B Page 2 of 2 |
Аналогичный номер детали - BAT54H |
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Аналогичное описание - BAT54H |
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