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SID3310 датащи(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

номер детали SID3310
подробное описание детали  P-Channel Enhancement Mode Power Mos.FET
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производитель  SECOS [SeCoS Halbleitertechnologie GmbH]
домашняя страница  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SID3310 датащи(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Electrical Characteristics( Tj=25 C Unless otherwise specified)
o
Notes: Pulse width limited by Max. junction temperature.
1.
-10
-24
-10A,VGS=0V,Tj=25 C
A
A
_
IS=
V
-1.2
_
_
VD=VG=0V,VS=-1.2
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
6
1.5
0.6
2.5
60
70
60
300
180
60
nC
nS
pF
VGS=0V
VDS=-6V
f=1.0MHz
VDD=-6 V
ID=-1A
VGS=- 5V
RG=6
RD=6
Ω
Ω
ID=-2.8 A
VDS=- 6V
VGS=- 5V
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
150
250
m
4.4
Ω
VGS=-4.5V, ID=-2.8A
VGS=-2.5V, ID=-2 A
_
_
S
VDS=- 5V, ID=-2.8A
_
_
_
_
20
0.1
0.5
100
-1
-25
±
V
V/
Reference to 25C, ID=-1mA
o
oC
V
nA
uA
uA
VGS=0V, ID=-250uA
VGS= 12V
±
VDS=-20V,VGS=0
VDS=-16V,VGS=0
VDS=VGS, ID=-250uA
_
_
_
_
_
_
_
_
_
_
_
-
-
-
Crss
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
Gfs
RDS(ON)
BVDSS
BVDS/ Tj
IDSS
VGS(th)
IGSS
_
_
_
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current(Tj=150 )
Forward Transconductance
oC
oC
2
2
Unit
Forward On Voltage
Continuous Source Current (Body Diode)
IS
_
Pulsed Source Current (Body Diode)
_
ISM
VSD
_
2
o
1
Source-Drain Diode
2.Pulse width 300us, dutycycle 2%.
ttp://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 5
Elektronische Bauelemente
SID3310
-10A, -20V,RDS(ON)150m
P-Channel Enhancement Mode Power Mos.FET
Ω


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