поискавой системы для электроныых деталей |
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SID9960 датащи(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SID9960 датащи(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 4 page Electrical Characteristics( Tj=25 C Unless otherwise specified) o Notes: Pulse width limited by safe operating area. 1. Parameter Symbol Max. Typ. Test Condition Min. Unit Forward On Voltage Reverse Recovery Time Trr _ Reverse Recovery Change _ Qrr nC nS 22 27.4 VSD _ _ IS=45 A, VGS=0V. V 1.3 2 _ _ IS=20A, VGS=0V. dl/dt=100A/us 2.Pulse width 300us, dutycycle 2%. ≦ ≦ 18 6 12 9 110 23 10 250 180 nC nS pF VGS=0V VDS=25V f=1.0MHz VDD=20V ID=20A VGS=10V RG=3.3 RD=1 Ω Ω ID=20A VDS=20V VGS= 4.5V _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 40 0.032 1.0 3.0 100 1 25 16 25 ± V V/ Reference to 25C, ID=1m o oC V nA uA uA m 30 Ω VGS=10V, ID=20A VGS=4.5V, ID=18A VGS=0V, ID=250uA VGS= 20V ± VDS=40V,VGS=0 VDS=32V,VGS=0 VDS=VGS, ID=250uA _ _ _ _ _ _ _ _ _ _ _ _ _ S VDS=10V, ID=20A _ _ _ _ 1500 _ _ A Total Gate Charge Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj IDSS Parameter Symbol Max. Typ. Test Condition Min. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current(Tj=150 ) VGS(th) IGSS Forward Transconductance Gfs oC oC 2 2 Source-Drain Diode RDS(ON) ttp://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 h Elektronische Bauelemente SID9960 42A, 40V,RDS(ON)16 m N-Channel Enhancement Mode Power Mos.FET Ω |
Аналогичный номер детали - SID9960 |
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Аналогичное описание - SID9960 |
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