1 / 2 page
Dated : 23/06/2007
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
1N4148M
SILICON EPITAXIAL PLANAR DIODE
Fast switching diode
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Reverse Voltage
VR
50
V
Peak Reverse Voltage
VRM
60
V
Rectified Current (Average), Half Wave Rectification with
Resist. Load at f ≥ 50 Hz
IO
130
mA
Surge Forward Current at t < 1 s
IFSM
500
mA
Power Dissipation
Ptot
400
1)
mW
Junction Temperature
Tj
200
O
C
Storage Temperature Range
TS
- 65 to + 200
O
C
1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Characteristics at Tj = 25 OC
Parameter
Symbol
Min.
Max.
Unit
Forward Voltage
at IF = 100 mA
VF
-
1.1
V
Reverse Leakage Current
at VR = 50 V
IR
-
0.5
μA
Reverse Breakdown Voltage
tested with 100 µA Pulses
V(BR)R
60
-
V
Capacitance
at VF = VR = 0
Ctot
-
3
pF
Reverse Recovery Time
from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω
trr
-
4
ns
Max. 2.9
Max. 1.9
Glass Case DO-34
Max. 0.45
Min. 27.5
Min. 27.5
XXX
Cathode Band
Part No.
Dimensions in mm
Black
Black
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
