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TC255 датащи(PDF) 4 Page - Texas Instruments |
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TC255 датащи(HTML) 4 Page - Texas Instruments |
4 / 18 page TC255P 336- × 244-PIXEL CCD IMAGE SENSOR SOCS057 – JUNE 1996 2-4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 detailed description The TC255P consists of five basic functional blocks: 1) the image-sensing area, 2) the image-clear line, 3) the image-storage area, 4) the serial register, and 5) the charge-detection node and output amplifier. image-sensing area Cross sections with potential-well diagrams and top views of image-sensing and storage-area elements are shown in Figure 1 and Figure 2. As light enters the silicon in the image-sensing area, free electrons are generated and collected in the potential wells of the sensing elements. During this time, the antiblooming gate is activated by the application of a burst of pulses every horizontal-blanking interval. This prevents blooming caused by the spilling of charge from overexposed elements into neighboring elements. To generate the dark reference that is necessary in subsequent video-processing circuits for restoration of the video-black level, there are 12 columns of elements on the left edge of the image-sensing area shielded from light. There is also one column of elements on the right side of the image-sensing area and one line between the image-sensing area and the image-clear line. ABG IAG 10 µm Clocked Barrier Virtual Barrier Antiblooming Gate Virtual Well Clocked Well Light Antiblooming Clocking Levels Accumulated Charge 10 µm Figure 1. Charge-Accumulation Process SAG Channel Stops Virtual Phase Clocked Phase Figure 2. Charge-Transfer Process image-clear line During start-up or electronic-shutter operations, it is necessary to clear the image area of charge without transferring it to the storage area. In such situations, the two image-area gates are clocked 244 times without clocking the storage-area gate. The charge in the image area is then cleared through the image-clear line. |
Аналогичный номер детали - TC255 |
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Аналогичное описание - TC255 |
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