поискавой системы для электроныых деталей |
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I2010AG-08TR датащи(PDF) 4 Page - PulseCore Semiconductor |
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I2010AG-08TR датащи(HTML) 4 Page - PulseCore Semiconductor |
4 / 8 page November 2006 P2010A rev 0.2 Low Frequency EMI Reduction IC 4 of 8 Notice: The information in this document is subject to change without notice. Absolute Maximum Ratings Symbol Parameter Rating Unit VDD, VIN Voltage on any pin with respect to Ground -0.5 to +7 V TSTG Storage temperature -65 to +125 °C TA Operating temperature -40 to+85 °C Ts Max. Soldering Temperature (10 sec) 260 °C TJ Junction Temperature 150 °C TDV Static Discharge Voltage (As per JEDEC STD22- A114-B) 2 KV Note: These are stress ratings only and are not implied for functional use. Exposure to absolute maximum ratings for prolonged periods of time may affect device reliability. DC Electrical Characteristics Symbol Parameter Min Typ Max Unit VIL Input Low Voltage GND - 0.8 V VIH Input High Voltage 2.0 - VDD + 0.3 V IIL Input Low Current (pull-up resistor on inputs SR0, FS0) - - -35 µA IIH Input High Current (pull-down resistor on input SSON) - - 35 µA IXOL XOUT output low current (at 0.4V, VDD = 3.3V) - 3 - mA IXOH XOUT output high current (at 2.5V, VDD = 3.3V) - 3 - mA VOL Output Low Voltage (VDD=3.3V, IOL = 20mA) - - 0.4 V VOH Output High Voltage (VDD=3.3V, IOH = 20mA) 2.5 - - V IDD Static Supply Current - 0.6 - mA ICC Dynamic Supply Current (3.3V and 15pF loading) 4 6 8 mA VDD Operating Voltage 2.7 3.3 5.5 V tON Power Up Time (First locked clock cycle after power up) 0.18 mS ZOUT Clock Output Impedance 50 Ω AC Electrical Characteristics Symbol Parameter Min Typ Max Unit fIN Input Frequency 10 20 35 MHz tLH* Output rise time (Measured at 0.8V to 2.0V) 0.7 0.9 1.1 nS tHL* Output fall time (Measured at 2.0V to 0.8V) 0.6 0.8 1.0 nS tJC Jitter (Cycle to cycle) - - 360 pS tD Output duty cycle 45 50 55 % *tLH and tHL are measured into a capacitive load of 15pF |
Аналогичный номер детали - I2010AG-08TR |
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Аналогичное описание - I2010AG-08TR |
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