TPIC1533DW datasheet(4/17 Pages) TI

номер детали	TPIC1533DW

подробное описание детали	QUAD AND HEX POWER DMOS ARRAY

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TPIC1533

QUAD AND HEX POWER DMOS ARRAY

SLIS064 – OCTOBER 1996

4

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

source-to-drain diode characteristics, Q1A, Q2A, TC = 25°C

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

trr

Reverse-recovery time

IS = 1.5 A,

VDS 14 V

VGS = 0,

di/dt

100 A/

µs

70

ns

QRR

Total diode charge

VDS = 14 V,

See Figures 1 and 23

di/dt = 100 A/

µs,

90

nC

trr

Reverse-recovery time

IS = 2 A,

VGS = 0,

75

ns

QRR

Total diode charge

S

VDS = 14V,

GS

di/dt = 100 A/

µs,

110

nC

resistive-load switching characteristics, Q1A, Q1B, Q2A, Q2B, TC = 25°C

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

td(on)

Turn-on delay time

20

td(off)

Turn-off delay time

VDD = 14 V,

RL = 9.1 Ω,ten = 10 ns,

30

ns

tr

Rise time

DD

,

tdis = 10 ns,

L

,

See Figure 3

en

,

15

ns

tf

Fall time

25

Qg

Total gate charge

V14 V

I1 5 A

V10 V

5.6

7

Qgs(th) Threshold gate-to-source charge

VDS = 14 V,

See Figure 4

ID = 1.5 A,

VGS = 10 V,

0.8

1

nC

Qgd

Gate-to-drain charge

See Figure 4

1.4

1.7

LD

Internal drain inductance

5

nH

LS

Internal source inductance

5

nH

Rg

Internal gate resistance

0.25

Ω

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TPIC1533DW датащи(PDF) 4 Page - Texas Instruments

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