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TPS1120YD датащи(PDF) 4 Page - Texas Instruments

номер детали TPS1120YD
подробное описание детали  DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS
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TPS1120, TPS1120Y
DUAL P-CHANNEL ENHANCEMENT-MODE MOSFETS
SLVS080A – MARCH 1994 – REVISED AUGUST 1995
4
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics at TJ = 25°C (unless otherwise noted)
static
PARAMETER
TEST CONDITIONS
TPS1120
UNIT
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VGS(th) Gate-to-source threshold voltage
VDS = VGS,
ID = – 250 µA
–1
– 1.25
– 1.50
V
VSD
Source-to-drain voltage (diode forward voltage)†
IS = – 1 A,
VGS = 0 V
– 0.9
V
IGSS
Reverse gate current, drain short circuited to source
VDS = 0 V,
VGS = – 12 V
±100
nA
IDSS
Zero gate voltage drain current
VDS = – 12 V,
TJ = 25°C
– 0.5
µA
IDSS
Zero-gate-voltage drain current
DS
,
VGS = 0 V
TJ = 125°C
–10
µA
VGS = – 10 V
ID = – 1.5 A
180
rDS( )
Static drain to source on state resistance†
VGS = – 4.5 V
ID = – 0.5 A
291
400
m
rDS(on)
Static drain-to-source on-state resistance†
VGS = – 3 V
ID =0 2 A
476
700
m
VGS = – 2.7 V
ID = – 0.2 A
606
850
gfs
Forward transconductance†
VDS = – 10 V,
ID = – 2 A
2.5
S
† Pulse test: pulse width
≤ 300 µs, duty cycle ≤ 2%
static
PARAMETER
TEST CONDITIONS
TPS1120Y
UNIT
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VGS(th) Gate-to-source threshold voltage
VDS = VGS,
ID = – 250 µA
– 1.25
V
VSD
Source-to-drain voltage (diode forward voltage)†
IS = – 1 A,
VGS = 0 V
– 0.9
V
VGS = – 10 V
ID = – 1.5 A
180
rDS( )
Static drain to source on state resistance†
VGS = – 4.5 V
ID = – 0.5 A
291
m
rDS(on)
Static drain-to-source on-state resistance†
VGS = – 3 V
ID =0 2 A
476
m
VGS = – 2.7 V
ID = – 0.2 A
606
gfs
Forward transconductance†
VDS = – 10 V,
ID = – 2 A
2.5
S
† Pulse test: pulse width
≤ 300 µs, duty cycle ≤ 2%
dynamic
PARAMETER
TEST CONDITIONS
TPS1120, TPS1120Y
UNIT
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Qg
Total gate charge
5.45
Qgs
Gate-to-source charge
VDS = – 10 V,
VGS = – 10 V,
ID = – 1 A
0.87
nC
Qgd
Gate-to-drain charge
1.4
td(on)
Turn-on delay time
4.5
ns
td(off)
Turn-off delay time
VDD = – 10 V,
RL = 10 Ω,ID = – 1 A,
13
ns
tr
Rise time
DD
,
RG = 6 Ω,
L
,
See Figures 1 and 2
D
,
10
tf
Fall time
2
ns
trr(SD)
Source-to-drain reverse recovery time
IF = 5.3 A,
di/dt = 100 A/
µs
16


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