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ISL12022MIBZ датащи(PDF) 3 Page - Intersil Corporation

номер детали ISL12022MIBZ
подробное описание детали  Low Power RTC with Battery Backed SRAM, Integrated 짹5ppm Temperature Compensation, and Auto Daylight Saving
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производитель  INTERSIL [Intersil Corporation]
домашняя страница  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

ISL12022MIBZ датащи(HTML) 3 Page - Intersil Corporation

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3
FN6668.5
July 10, 2009
Absolute Maximum Ratings
Thermal Information
Voltage on VDD, VBAT and IRQ/FOUT pins
(respect to ground) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 6.0V
Voltage on SCL and SDA pins
(respect to ground) . . . . . . . . . . . . . . . . . . . . . -0.3V to VDD +0.3V
ESD Rating
Human Body Model (Per MIL-STD-883 Method 3014) . . . . .>3kV
Machine Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>300V
Thermal Resistance (Typical, Note 1)
θJA (°C/W)
20 Lead SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
70
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . -40°C to +85°C
Pb-Free Reflow Profile (Note 2). . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
1.
θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
2. The ISL12022M Oscillator Initial Accuracy can change after solder reflow attachment. The amount of change will depend on the reflow
temperature and length of exposure. A general rule is to use only one reflow cycle and keep the temperature and time as short as possible.
Changes on the order of ±1ppm to ±3ppm can be expected with typical reflow profiles.
DC Operating Characteristics - RTC
Test Conditions: VDD = +2.7 to +5.5V, TA = -40°C to +85°C, unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
MIN
(Note 10)
TYP
(Note 6)
MAX
(Note 10)
UNITS
NOTES
VDD
Main Power Supply
(Note 11)
2.7
5.5
V
VBAT
Battery Supply Voltage
(Note 11)
1.8
5.5
V
3
IDD1
Supply Current. (I2C Not Active,
Temperature Conversion Not Active, FOUT
Not Active)
VDD = 5V
4.1
7
µA
4, 5
VDD = 3V
3.5
6
µA
4, 5
IDD2
Supply Current. (I2C Active, Temperature
Conversion Not Active, Fout Not Active)
VDD = 5V
200
500
µA
4, 5
IDD3
Supply Current. (I2C Not Active,
Temperature Conversion Active, FOUT Not
Active)
VDD = 5V
120
400
µA
4, 5
IBAT
Battery Supply Current
VDD = 0V, VBAT = 3V, TA = +25°C
1.0
1.6
µA
4
VDD = 0V, VBAT = 3V
1.0
5.0
µA
4
IBATLKG
Battery Input Leakage
VDD = 5.5V, VBAT = 1.8V
100
nA
ILI
Input Leakage Current on SCL
VIL = 0V, VIH = VDD
-1.0
±0.1
1.0
µA
ILO
I/O Leakage Current on SDA
VIL = 0V, VIH = VDD
-1.0
±0.1
1.0
µA
VBATM
Battery Level Monitor Threshold
-100
+100
mV
VPBM
Brownout Level Monitor Threshold
-100
+100
mV
VTRIP
VBAT Mode Threshold
(Note 11)
2.0
2.2
2.4
V
VTRIPHYS VTRIP Hysteresis
30
mV
8
VBATHYS VBAT Hysteresis
50
mV
8
ΔFout
T
Oscillator Stability vs Temperature
VDD = 3.3V
-5
+5
ppm
2
ΔFoutV
Oscillator Stability vs Voltage
2.7V
≤ VDD ≤ 5.5V
-3
+3
ppm
ΔFoutI
Oscillator Initial Accuracy
VDD = 3.3V
-3
+3
ppm
2
Temp
Temperature Sensor Accuracy
VDD = VBAT = 3.3V
±2
°C
8
IRQ/FOUT (OPEN DRAIN OUTPUT)
VOL
Output Low Voltage
VDD = 5V, IOL = 3mA
0.4
V
VDD = 2.7V, IOL = 1mA
0.4
V
ISL12022M


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