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UF28150J датащи(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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UF28150J датащи(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 3 page 1 RF Power MOSFET Transistor 150W, 100MHz-500MHz, 28V M/A-COM Products Released; RoHS Compliant UF28150J • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Features • DMOS structure • Lower capacitance for broadband operation • Common source configuration Package Outline 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. M/A-COM does not recommend sustained operation near these maximum limits. 3. At 25°C Tcase, unless noted. ABSOLUTE MAXIMUM RATINGS1, 2, 3 Parameter Rating Drain-Source Voltage 65 Gate-Source Voltage 20 Drain-Source Current 16* Power Dissipation 389 Junction Temperature 200 Storage Temperature -65 to +150 Thermal Resistance 0.45 Symbol VDS VGS IDS PD TJ TSTG ΘJC Units V V A W °C °C °C/W ELECTRICAL SPECIFICATIONS: 25°C Parameter Test Conditions Units Min. Max. Drain-Source Breakdown Voltage VGS = 0.0 V, IDS = 20.0 mA* BVDSS 65 — Drain-Source Leakage Current VDS = 28.0 V, VGS = 0.0V* IDSS — 4.0 Gate-Source Leakage Current VGS = 20 V, VDS = 0.0 V* IGSS — 4.0 Gate Threshold Voltage VDS = 10.0 V, IDS = 400.0 mA* VGS(TH) 2.0 6.0 Forward Transconductance VDS = 10.0 V, IDS = 4000.0 mA, ∆VGS = 1.0 V, 80µs pulse* GM 2.0 — Input Capacitance VDS = 28.0V, F = 1.0 MHz* CISS — 180 Output Capacitance VDS = 28.0V, F = 1.0 MHz* COSS — 120 Reverse Capacitance VDS = 28.0V, F = 1.0 MHz* CRSS — 32 Power Gain VDD = 28.0 V, IDQ = 400.0 mA, POUT = 150.0 W, F = 500 MHz GP 8 — Drain Efficiency VDD = 28.0 V, IDQ = 400.0 mA, POUT = 150.0 W, F = 500 MHz ηD 55 — Load Mismatch Tolerance VDD = 28.0 V, IDQ = 400.0 mA, POUT = 150.0 W, F = 500 MHz VSWR-T — 10:1** Notes: * Per side ** At all phase angles |
Аналогичный номер детали - UF28150J |
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Аналогичное описание - UF28150J |
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