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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SD4870TR датащи(PDF) 3 Page - Silan Microelectronics Joint-stock |
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SD4870TR датащи(HTML) 3 Page - Silan Microelectronics Joint-stock |
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3 / 8 page  ELECTRICAL CHARACTERISTICS (Unless otherwise specified, Tamb=25°C) Characteristics Symbol Test Condition Min. Typ. Max. Unit VDD Startup Current IVDD_ST VDD=12 V,RI=100k Ω -- 3 20 μA Operation Current IVDD VDD=16V, VFB =3V, RI=100k Ω -- 2 -- mA UVLO Threshold Voltage VUVLO 13.3 14.3 15.3 V UVLO Hysteresis Voltage VUVLOH -- 6.3 -- V VDD Clamp Voltage VVDD_CLP IVDD =10mA -- 21.5 -- V Feedback PWM Gain AVCS ΔVFB /ΔVSENSE -- 2 -- V/V FB Open Loop Voltage VFB_OPEN 4.5 4.8 5 V FB Short Circuit Current IFB_SHORT FB short connected to ground 0.8 1 1.2 mA FB OL Threshold Voltage VFB_OL -- 3.8 -- V OL Debounce Time TD_OL 35 -- ms FB Input Impedance ZFB_IN 4 6 -- kΩ Maximum Duty Cycle DMAX VDD=16V, RI=100k Ω VFB =3V,VSENSE =0V -- 75 -- % Current Sense LEB Time TLEB RI=100k Ω -- 300 -- ns SENSE Input Impedance ZSENSE_IN -- 85 -- kΩ OC Control Delay TOC -- 75 -- ns OC Detection Threshold VSENSE_OC 0.7 0.75 0.8 V Switching Frequency Ocsillation Frequency fS RI=100k Ω 60 65 70 kHz Frequency Stability With VDD ΔfS_VDD VDD=12~25V,RI=100k Ω -- 5 -- % RI External Resistance Range RRI_RANGE 50 100 150 kΩ Light Load Mode Frequency fS_LLM -- 22 -- kHz Frequency Shuffling Range ΔfS_SHUF RI=100k Ω -3 -- 3 % Gate Driver Output Low Level VOL VDD=16V, IO=-20mA -- -- 0.8 V Output High Level VOH VDD=16V, IO=20mA 10 -- -- V Output Clamp Voltage Level VOH_CLAMP -- 13 -- V Output Rising Time TR VDD=16V,CL=1nF -- 220 -- ns Output Falling Time TF VDD=16V,CL=1nF -- 70 -- ns HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.0 2009.09.22 Http://www.silan.com.cn Page 3 of 8 |
Аналогичный номер детали - SD4870TR |
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Аналогичное описание - SD4870TR |
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