поискавой системы для электроныых деталей |
|
FCA22N60N датащи(PDF) 3 Page - Fairchild Semiconductor |
|
FCA22N60N датащи(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page FCA22N60N Rev. A2 www.fairchildsemi.com 3 Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 1 10 0.1 1 10 100 *Notes: 1. 250 µµµµs Pulse Test 2. TC = 25 o C VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.0 V 4.0 V VDS,Drain-Source Voltage[V] 0.3 2 3 4 5 6 7 8 1 10 100 -55 o C 150 o C *Notes: 1. VDS = 20V 2. 250 µµµµs Pulse Test 25 o C VGS,Gate-Source Voltage[V] 0 10 20 30 40 50 60 0.1 0.2 0.3 0.4 *Note: TC = 25 o C VGS = 20V VGS = 10V ID, Drain Current [A] 0.0 0.5 1.0 1.5 1 10 100 *Notes: 1. V GS = 0V 2. 250 µµµµs Pulse Test 150 o C V SD, Body Diode Forward Voltage [V] 25 o C 0.1 1 10 100 1 10 100 1000 10000 1E5 Ciss Coss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd *Note: 1. VGS = 0V 2. f = 1MHz Crss VDS, Drain-Source Voltage [V] 600 0 10 20 30 40 50 0 2 4 6 8 10 *Note: ID = 11A VDS = 120V VDS = 300V VDS = 480V Qg, Total Gate Charge [nC] |
Аналогичный номер детали - FCA22N60N |
|
Аналогичное описание - FCA22N60N |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |