поискавой системы для электроныых деталей |
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ST3400 датащи(PDF) 1 Page - Stanson Technology |
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ST3400 датащи(HTML) 1 Page - Stanson Technology |
1 / 6 page ST3400 N Channel Enhancement Mode MOSFET 5.8A 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stnasontech.com DESCRIPTION The ST3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high side switching. FEATURE PIN CONFIGURATION SOT-23-3L 30V/5.8A, RDS(ON) = 28mΩ (Typ.) @VGS = 10V 30V/4.8A, RDS(ON) = 33mΩ @VGS = 4.5V 3 1 STN3400 2006. V1 1 1.Gate 2.Source 3.Drain PART MARKING SOT-23-3L Y: Year Code A: Week Code ORDERING INFORMATION Part Number Package Part Marking ST3400S23RG SOT-23-3L A0YA ※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52) ※ ST3400S23RG S23 : SOT-23-3L ; R : Tape Reel ; G : Pb – Free 30V/4.0A, RDS(ON) = 40mΩ @VGS = 2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design D G S 2 3 1 2 A0YA |
Аналогичный номер детали - ST3400 |
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Аналогичное описание - ST3400 |
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