STM5853

P Channel Mode MOSFET with Schottky

-3.6A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

DESCRIPTION

STM5853 is the P-Channel logic enhancement mode power field effect transistors with

Schottky Diode. The MOSFET is produced using high cell density, DMOS trench

technology. This high density process is especially tailored to minimize on-state

resistance. This device is particularly suited for charging switch for cellular phone and

other battery powered circuits

PIN CONFIGURATION

DFN8

STM5853 2008. V1

J: Part Marking

X: Year Code

A: Process Code

FEATURE

@VGS = -4.5V

@VGS = -2.5V

@VGS = -1.8V

20V/1.0A, Vf =0.46V @ 0.5A

Super high density cell design for

ORDERING INFORMATION

Part Number

Package

Part Marking

STM5853QF8RG

DFN8

SYA

※

Week Code Code : A ~ Z(1~26) ; a ~ z(27~52)

※

STM5853QF8RG

QF8 : QFN8; R: Tape Reel ; G: Pb – Free