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TC2281 датащи(PDF) 1 Page - Transcom, Inc. |
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TC2281 датащи(HTML) 1 Page - Transcom, Inc. |
1 / 4 page TC2281 REV4_20070504 TRANSCOM, INC., 90 Dasoong 7 th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 1/4 Low Noise and High Dynamic Range Packaged GaAs FETs FEATURES PHOTO ENLARGEMENT ! 0.5 dB Typical Noise Figure at 12 GHz ! High Associated Gain: Ga = 12 dB Typical at 12 GHz ! 21.5 dBm Typical Power at 12 GHz ! 12 dB Typical Linear Power Gain at 12 GHz ! Breakdown Voltage : BVDGO ≥ 9 V ! Lg = 0.25 µm, Wg = 300 µm ! Tight Vp ranges control ! High RF input power handling capability ! 100 % DC Tested ! Micro-X Metal Ceramic Package DESCRIPTION The TC2281 is a high performance field effect transistor housed in a ceramic micro-x package with TC1201 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality. ELECTRICAL SPECIFICATIONS (TA=25 °°°°C) Symbol Conditions MIN TYP MAX UNIT NF Noise Figure at VDS = 4 V, IDS = 25 mA, f = 12GHz 0.5 0.7 dB Ga Associated Gain at VDS = 4 V, IDS = 25 mA, f = 12GHz 10 12 dB P1dB Output Power at 1dB Gain Compression Point, f = 12GHz VDS = 6 V, IDS = 40 mA 20.5 21.5 dBm GL Linear Power Gain, f = 12GHz VDS = 6 V, IDS = 40 mA 11 12 dB IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V 90 mA gm Transconductance at VDS = 2 V, VGS = 0 V 100 mS VP Pinch-off Voltage at VDS = 2 V, ID = 0.6mA -1.0* Volts BVDGO Drain-Gate Breakdown Voltage at IDGO = 0.15mA 9 12 Volts Rth Thermal Resistance 150 °C/W ABSOLUTE MAXIMUM RATINGS (TA=25 °°°°C) Symbol Parameter Rating VDS Drain-Source Voltage 7.0 V VGS Gate-Source Voltage -3.0 V IDS Drain Current IDSS IGS Gate Current 300 µA Pin RF Input Power, CW 21 dBm PT Continuous Dissipation 400 mW TCH Channel Temperature 175 °C TSTG Storage Temperature - 65 °C to +175 °C TYPICAL NOISE PARAMETERS (TA=25 °°°°C) VDS = 4 V, IDS = 25 mA Γopt Frequency (GHz) NFopt (dB) GA (dB) MAG ANG Rn/50 2 0.35 24.8 0.83 38 0.40 4 0.38 19.2 0.73 75 0.32 6 0.40 16.0 0.66 105 0.26 8 0.46 13.7 0.60 130 0.21 10 0.52 12.1 0.55 154 0.17 12 0.57 11.1 0.50 180 0.15 14 0.69 10.6 0.47 -153 0.14 16 0.82 10.4 0.44 -121 0.15 18 1.02 10.3 0.40 -81 0.17 * For the tight control of the pinch-off voltage range, we divide TC2281 into 3 model numbers to fit customer design requirement (1)TC2281P0710 : Vp = -0.7V to -1.0V (2)TC2281P0811 : Vp = -0.8V to -1.1V (3)TC2281P0912 : Vp = -0.9V to -1.2V If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details. |
Аналогичный номер детали - TC2281 |
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Аналогичное описание - TC2281 |
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