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TC2281 датащи(PDF) 1 Page - Transcom, Inc.

номер детали TC2281
подробное описание детали  Low Noise and High Dynamic Range Packaged GaAs FETs
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производитель  TRANSCOM [Transcom, Inc.]
домашняя страница  http://www.transcominc.com.tw
Logo TRANSCOM - Transcom, Inc.

TC2281 датащи(HTML) 1 Page - Transcom, Inc.

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TC2281
REV4_20070504
TRANSCOM, INC., 90 Dasoong 7
th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
1/4
Low Noise and High Dynamic Range Packaged GaAs FETs
FEATURES
PHOTO ENLARGEMENT
! 0.5 dB Typical Noise Figure at 12 GHz
! High Associated Gain: Ga = 12 dB Typical at 12 GHz
! 21.5 dBm Typical Power at 12 GHz
! 12 dB Typical Linear Power Gain at 12 GHz
! Breakdown Voltage : BVDGO
≥ 9 V
! Lg = 0.25
µm, Wg = 300 µm
! Tight Vp ranges control
! High RF input power handling capability
! 100 % DC Tested
! Micro-X Metal Ceramic Package
DESCRIPTION
The TC2281 is a high performance field effect transistor housed in a ceramic micro-x package with TC1201
PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device
suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (TA=25
°°°°C)
Symbol
Conditions
MIN
TYP
MAX
UNIT
NF
Noise Figure at VDS = 4 V, IDS = 25 mA, f = 12GHz
0.5
0.7
dB
Ga
Associated Gain at VDS = 4 V, IDS = 25 mA, f = 12GHz
10
12
dB
P1dB
Output Power at 1dB Gain Compression Point, f = 12GHz VDS = 6 V, IDS = 40 mA
20.5
21.5
dBm
GL
Linear Power Gain, f = 12GHz VDS = 6 V, IDS = 40 mA
11
12
dB
IDSS
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
90
mA
gm
Transconductance at VDS = 2 V, VGS = 0 V
100
mS
VP
Pinch-off Voltage at VDS = 2 V, ID = 0.6mA
-1.0*
Volts
BVDGO Drain-Gate Breakdown Voltage at IDGO = 0.15mA
9
12
Volts
Rth
Thermal Resistance
150
°C/W
ABSOLUTE MAXIMUM RATINGS (TA=25
°°°°C)
Symbol
Parameter
Rating
VDS
Drain-Source Voltage
7.0 V
VGS
Gate-Source Voltage
-3.0 V
IDS
Drain Current
IDSS
IGS
Gate Current
300
µA
Pin
RF Input Power, CW
21 dBm
PT
Continuous Dissipation
400 mW
TCH
Channel Temperature
175
°C
TSTG
Storage Temperature
- 65
°C to +175 °C
TYPICAL NOISE PARAMETERS (TA=25
°°°°C)
VDS = 4 V, IDS = 25 mA
Γopt
Frequency
(GHz)
NFopt
(dB)
GA
(dB)
MAG
ANG
Rn/50
2
0.35
24.8
0.83
38
0.40
4
0.38
19.2
0.73
75
0.32
6
0.40
16.0
0.66
105
0.26
8
0.46
13.7
0.60
130
0.21
10
0.52
12.1
0.55
154
0.17
12
0.57
11.1
0.50
180
0.15
14
0.69
10.6
0.47
-153
0.14
16
0.82
10.4
0.44
-121
0.15
18
1.02
10.3
0.40
-81
0.17
* For the tight control of the pinch-off voltage range, we divide TC2281 into 3 model numbers to fit customer design requirement
(1)TC2281P0710 : Vp = -0.7V to -1.0V (2)TC2281P0811 : Vp = -0.8V to -1.1V (3)TC2281P0912 : Vp = -0.9V to -1.2V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.


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