TC3928

REV1_20070503

Phone: 886-6-5050086

Fax: 886-6-5051602

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Packaged Single-Bias Low Noise PHEMT GaAs FETs

FEATURES

! 0.9 dB Typical Noise Figure at 12 GHz

PHOTO ENLARGEMENT

! High Associated Gain: Ga = 12 dB Typical at 12 GHz

! 21.5dBm Typical Power at 12 GHz

! 13 dB Typical Linear Power Gain at 12 GHz

! Lg = 0.25 µm, Wg = 300 µm

! 100 % DC Tested

! Micro-X Metal Ceramic Package

DESCRIPTION

The TC3928 is a single-bias medium power ceramic micro-x packaged device with TC1201 PHEMT GaAs FETs,

which is designed to provide the single power supply application. The device is suitable for oscillator, medium

power amplifier in a wide range of commercial applications. All devices are 100% DC tested to assure consistent

quality.

°°°°C)

Symbol

Conditions

MIN

TYP

MAX

UNIT

NF

0.9

1.5

dB

10

12

dB

20.5

21.5

dBm

12

13

dB

50

mA

Thermal Resistance

125

°C/W

°°°°C)

HANDLING PRECAUTIONS:

Symbol

Parameter

Rating

Drain-Source Voltage

7.0 V

RF Input Power, CW

21 dBm

Continuous Dissipation

300 mW

Channel Temperature

Storage Temperature

-65°C to +175°C

The user must operate in a clean, dry environment.

Electrostatic Discharge (ESD) precautions should be

observed at all stages of storage, handling, assembly,

and testing. The static discharge must be less than 300V.