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TPC6502 датащи(PDF) 2 Page - Toshiba Semiconductor

номер детали TPC6502
подробное описание детали  Transistor Silicon NPN Epitaxial Type
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC6502 датащи(HTML) 2 Page - Toshiba Semiconductor

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TPC6502
2006-11-13
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cutoff current
ICBO
VCB = 100 V, IE = 0
100
nA
Emitter cutoff current
IEBO
VEB = 7 V, IC = 0
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
50
V
hFE (1)
VCE = 2 V, IC = 0.3 A
400
1000
DC current gain
hFE (2)
VCE = 2 V, IC = 1 A
200
Collector-emitter saturation voltage
VCE (sat)
IC = 1 A, IB = 20 mA
0.14
V
Base-emitter saturation voltage
VBE (sat)
IC = 1 A, IB = 20 mA
1.10
V
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
13
pF
Rise time
tr
40
Storage time
tstg
500
Switching time
Fall time
tf
See Figure 1 circuit diagram.
VCC ∼− 30 V, RL = 30 Ω
IB1 = −IB2 = 33.3 mA
120
ns
Circuit Configuration
Marking
Figure 1. Switching Time Test Circuit & Timing Chart
IB2
IB1
20
μs
Output
Input
IB2
IB1
VCC
Duty cycle
< 1%
12
3
654
Part No.
(or abbreviation code)
H2B
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Lot code (month)
Lot No.
Pin #1
Lot code
(year)
Product-specific code


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