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TPC6502 датащи(PDF) 2 Page - Toshiba Semiconductor |
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TPC6502 датащи(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page TPC6502 2006-11-13 2 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Collector cutoff current ICBO VCB = 100 V, IE = 0 ⎯ ⎯ 100 nA Emitter cutoff current IEBO VEB = 7 V, IC = 0 ⎯ ⎯ 100 nA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 50 ⎯ ⎯ V hFE (1) VCE = 2 V, IC = 0.3 A 400 ⎯ 1000 DC current gain hFE (2) VCE = 2 V, IC = 1 A 200 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 20 mA ⎯ ⎯ 0.14 V Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 20 mA ⎯ ⎯ 1.10 V Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 13 ⎯ pF Rise time tr ⎯ 40 ⎯ Storage time tstg ⎯ 500 ⎯ Switching time Fall time tf See Figure 1 circuit diagram. VCC ∼− 30 V, RL = 30 Ω IB1 = −IB2 = 33.3 mA ⎯ 120 ⎯ ns Circuit Configuration Marking Figure 1. Switching Time Test Circuit & Timing Chart IB2 IB1 20 μs Output Input IB2 IB1 VCC Duty cycle < 1% 12 3 654 Part No. (or abbreviation code) H2B A line indicates lead (Pb)-free package or lead (Pb)-free finish. Lot code (month) Lot No. Pin #1 Lot code (year) Product-specific code |
Аналогичный номер детали - TPC6502 |
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Аналогичное описание - TPC6502 |
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